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Temperature drift analysis in silicon micromachined piezoresistive accelerometerPublished in
2004
Pages: 561 - 563
Unlike in capacitive accelerometers, where the output voltage is less sensitive to temperature effects, but in piezoresistive accelerometers the output voltage varies considerably with respect to temperature. This paper presents temperature drift analysis of silicon micromachined peizoresistive accelerometer. The input range of the accelerometer is ±13 g and this device finds application in aircraft motion sensing. The temperature drift analysis of the device is simulated using MemPZR module of CoventorWare 2003.1 and the simulation results are presented. © 2004 IEEE.
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About the journal
| Journal | Proceedings of the IEEE INDICON 2004 - 1st India Annual Conference |
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Authors (1)
Ravi Sankar A- Influence of the Flexure Position and a Thick Gold Film on the Performance of Beam-Mass Structures
- Coupled effects of gold electroplating and electrochemical discharge machining processes on the performance improvement of a capacitive accelerometer
- Design and optimization of a doubly clamped piezoresistive acceleration sensor with an integrated silicon nanowire piezoresistor
- A very-low cross-axis sensitivity piezoresistive accelerometer with an electroplated gold layer atop a thickness reduced proof mass
