A simple process of gas sensing is represented here using Ce doped tin oxide nanomaterial based thin film sensor. A novel flow metric gas chamber has been designed and utilized for gas sensing. Doping plays a vital role in enhancing the sensing properties of nanomaterials. Ce doped tin oxide was prepared by hydrothermal method and the same has been used to fabricate a thin film for sensing. The microstructure and morphology of the prepared materials were analysed by SEM, XRD, and FTIR analysis. The SEM images clearly show that doping can clamp down the growth of the large crystallites and can lead to large agglomeration spheres. Thin film gas sensors were formed from undoped pure SnO2and Ce doped SnO2. The sensors were exposed to ammonia and ethanol gases. The responses of the sensors to different concentrations (50–500 ppm) of ammonia and ethanol at different operating temperatures (225°C–500°C) were studied. Results show that a good sensitivity towards ammonia was obtained with Ce doped SnO2thin film sensor at an optimal operating temperature of 325°C. The Ce doped sensor also showed good selectivity towards ammonia when compared with ethanol. Pure SnO2showed good sensitivity with ethanol when compared with Ce doped SnO2thin film sensor. Response time of the sensor and its stability were also studied.