This paper explores the performance of a Junctionless Tunnel field effect transistor (JLTFET) by varying the work function (WF) of the gate electrodes. JLTFET exploits the working principle of a Tunnel field effect transistor (TFET) in Junctionless FETs (JLFETs) by tuning the WF of the two gates, control gate (CG) and auxiliary gate (AG). High Ion/Ioff ratio of 5.8 × 1011 and average subthreshold swing of 60 mV/decade are obtained for an optimised WF of CG and AG. DC parameters, threshold voltage (VT) and subthreshold swing (SS), AC parameters, intrinsic gain and unity gain cut-off frequency (ft) are extracted with respect to WF variation of the two gates. The JLTFET exhibits less SS and high intrinsic gain for higher values of WF of AG. ©, © Engineers Australia.