Vellore Institute of Technology (VIT) is a private university located in&nbsp;Tamil Nadu, India. Founded in 1984, as Vellore Engineering College, the institution offers 20 undergraduate, 34 postgraduate, four integrated and four research programs. It has campuses in Vellore, Amravati, Bhopal and Chennai.

VIT is one of the top ranked private universities in India according to NIRF, THE and QS Rankings.&nbsp;Govt. of India has recognized&nbsp;VIT, Vellore as an&nbsp;Institution of Eminence. This has allowed VIT to take independent quality initiatives and move up in world ranking.

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VIT University

Analysis of slanted beam MEMS capacitive accelerometer structures has been presented in this paper. A new structure has been proposed to be used for high g applications upto ±30 g. The proposed new structure has been compared with three other different structures. All the four structures were simulated using CoventorWare™ 2005 and their performance characteristics were compared. It has been found that other three structures are found suitable only for low g applications up to ±2 g. One among the four designs known as single beam structure was successfully fabricated in a single step anisotropic wet chemical etching in aqueous KOH solution using 〈111〉 plane as physical etch stop. ©2007 IEEE.

Electronics

School of Electronics Engineering

Chennai Campus

World University root node

IEEE Region 10 Annual International Conference, Proceedings/TENCON

Structural sensitivity analysis of slanted beam MEMS capacitive accelerometers

Performance enhancement of Silicon MEMS PZR accelerometer with electroplated gold on proofmass has been presented in this paper. Performance enhancement is achieved by depositing heavy electroplated gold mass of 20 μm thickness on top of proof mass of the device. The structures were simulated for acceleration of ± 10 g using a commercially available software package CoventorWare™ 2005. For 20 μm thick electroplated gold on whole area of proofmass, sensitivity along Z-axis is increased by 60.6% as compared to the structure without gold. For 10 g acceleration off-axis sensitivities along X and Y-axes are reduced by 38.3% and 18.96% respectively. A commercially available sulphite based solution TSG-250™ was used for electroplating. Both the accelerometer structures have been successfully fabricated. Dual doped TMAH solution was used for wet anisotropic etching. Thus the fabrication process is CMOS compatible. ©2007 IEEE.

Proceedings of the 14th International Workshop on the Physics of Semiconductor Devices, IWPSD

Performance enhancement of silicon MEMS PZR accelerometer with electroplated gold on proofmass

The CMOS compatible bulk micromachined piezoresistive accelerometer presented in this paper consists of four flexures supporting a proof mass. Four pairs of boron-diffused piezoresistors are located at maximum stress points on the flexures near the proof mass and frame ends. Because of the opposite nature of stress at the two ends, these piezoresistors can be connected to form a Wheatstone bridge such that the off-axis responses are practically cancelled while the on-axis (along perpendicular to proof mass) response is maximized. The device is simulated using CoventorWare. In the fabrication process, dual-doped TMAH solution is used for wet anisotropic etching. The novelty of this etching process is that the bulk micromachining can be performed after aluminum metallization. The etched surface is also smooth. The fabrication is thus CMOS compatible. The accelerometer exhibits good linearity over 0-10 g. © 2005 Elsevier Ltd. All rights reserved.

Microelectronics Journal

CMOS compatible bulk micromachined silicon piezoresistive accelerometer with low off-axis sensitivity

Unlike in capacitive accelerometers, where the output voltage is less sensitive to temperature effects, but in piezoresistive accelerometers the output voltage varies considerably with respect to temperature. This paper presents temperature drift analysis of silicon micromachined peizoresistive accelerometer. The input range of the accelerometer is ±13 g and this device finds application in aircraft motion sensing. The temperature drift analysis of the device is simulated using MemPZR module of CoventorWare 2003.1 and the simulation results are presented. © 2004 IEEE.