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Articles
Analysis of dislocation scattering on electron mobility in GaN high electron mobility transistorsPublished in
2003
DOI: 10.1063/1.1577406
Volume: 93
Issue: 12
Pages: 10046 - 10052
Topics: Induced high electron mobility transistor (70)%70% related to the paper, Electron mobility (69)%69% related to the paper, Dislocation (52)%52% related to the paper, Scattering (51)%51% related to the paper and Wurtzite crystal structure (50)%50% related to the paper
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About the journal
| Journal | Journal of Applied Physics |
|---|---|
| ISSN | 00218979 |
| Open Access | No |
Authors (1)
Partha Sharathi Mallick- Temperature and stress dependent properties of barrier type anodic Al 2O3 MIM capacitor
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- Effect of electrolyte on the performance of anodic titania metal-insulator-metal capacitors
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