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Atomic Layer Deposition of p-Type Epitaxial Thin Films of Undoped and N-Doped Anatase TiO2
, M.B. Sreedhara, J. Ghatak, C.N.R. Rao
Published in American Chemical Society
Volume: 8
Issue: 12
Pages: 7897 - 7901
Employing atomic layer deposition, we have grown p-type epitaxial undoped and N-doped anatase TiO2(001) thin films on c-axis Al2O3 substrate. From X-ray diffraction and transmission electron microscopy studies, crystallographic relationships between the film and the substrate are found to be (001)TiO2//(0001)Al2O3 and [110]TiO2//[0110]Al2O3. N-doping in TiO2 thin films enhances the hole concentration and mobility. The optical band gap of anatase TiO2 (3.23 eV) decreases to 3.07 eV upon N-doping. The epitaxial films exhibit room-temperature ferromagnetism and photoresponse. A TiO2-based homojunction diode was fabricated with rectification from the p-n junction formed between N-doped p-TiO2 and n-TiO2. (Graph Presented). © 2016 American Chemical Society.
About the journal
JournalData powered by TypesetACS Applied Materials and Interfaces
PublisherData powered by TypesetAmerican Chemical Society