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Band gap variation in copper nitride thin films
Guruprasad Sahoo, Mahaveer K. Jain, Sahoo G, , Jain M.K.
Published in
2013
Pages: 540 - 542
Abstract
Copper nitride thin films have been prepared by pulsed direct current reactive magnetron sputtering. Structural, morphological and optical properties of the as-deposited films have been studied. X-ray diffraction analysis shows that the films are polycrystalline single phase of Cu3N. Prominent growth along (100) plane is observed for higher nitrogen flow rate whereas growth along (111) plane is observed for relatively lower nitrogen flow rate. The band gap of this material changes from 1.02 to 1.40 eV by varying the nitrogen flow rate and deposition time. © 2013 IEEE.
About the journal
JournalProceedings of the International Conference on "Advanced Nanomaterials and Emerging Engineering Technologies", ICANMEET 2013
Open AccessNo
Concepts (17)
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    As-deposited films
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    BAND GAP VARIATION
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    COPPER NITRIDE
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    COPPER NITRIDE THIN FILMS
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    Deposition time
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    NITROGEN FLOW RATES
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    PULSED DIRECT CURRENT
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    Reactive magnetron sputtering
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    Copper
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    Energy gap
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    ENGINEERING TECHNOLOGY
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    Flow rate
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    Nanostructured materials
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    Nitrogen
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    Sputtering
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    X ray diffraction analysis
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    Thin films