The electron mobility of GaN has been obtained at various temperatures by the relaxation time approximation method. The effect of dislocation scattering has also been discussed and calculated alongwith other important scattering mechanisms in this material. The results agree with other available experimental and theoretical data.&nbsp;

Partha Sharathi Mallick

Department of Instrumentation

School of Electrical Engineering

Vellore Campus

Janardan Kundu

C.K. Sarkar

Fulltext

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Calculation of electron mobility and effect of dislocation scattering in GaN

Semiconductor Physics, Quantum Electronics & Optoelectronics

Calculation of electron mobility and effect of dislocation scattering in GaN

Journal	Semiconductor Physics, Quantum Electronics & Optoelectronics
Publisher	National Academy of Sciences of Ukraine
Open Access	Yes