Sn1-xFexO2 (x = 0.07) thin films were prepared on to glass substrates using flash evaporation technique and annealed in air at different temperatures. The X-ray diffraction study showsed that all the thin films annealed at different temperatures were in tetragonal rutile structure of SnO2. The Elemental analysis confirms the presence of Fe and Sn and O in the films. The magnetic measurements were carried out using vibrating sample magnetometer and found that the strength of magnetization decreased with increase of annealing temperature. © 2016 Author(s).

Kuppan P

Department of Manufacturing Engineering

School of Mechanical Engineering

Vellore Campus

Shaik Kaleemulla

Department of Physics

School of Advanced Sciences

Krishnamoorthi C

Begam M.R

Babu S.H

Rao N.M

Vellore Institute of Technology (VIT) is a private university located in&nbsp;Tamil Nadu, India. Founded in 1984, as Vellore Engineering College, the institution offers 20 undergraduate, 34 postgraduate, four integrated and four research programs. It has campuses in Vellore, Amravati, Bhopal and Chennai.

VIT is one of the top ranked private universities in India according to NIRF, THE and QS Rankings.&nbsp;Govt. of India has recognized&nbsp;VIT, Vellore as an&nbsp;Institution of Eminence. This has allowed VIT to take independent quality initiatives and move up in world ranking.

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VIT University

Effect of air annealing on structure and magnetic properties of Sn1-xFexO2 thin films

AIP Conference Proceedings

Polycrystalline (In1-xNix)2O3 thin films (x=0.00, 0.03, 0.05 and 0.07) were deposited on glass substrates by electron beam evaporation technique. The effect of Ni concentration on composition, structural and magnetic properties of (In1-xNix)2O3 thin films was studied. Increment in the Ni concentration does increase the oxygen vacancies and ferromagnetic strength in (In1-xNix)2O3 thin films. X-ray photoelectron spectroscopy (XPS) studies indicate the dopant Ni exists in Ni (II) state in In2O3 host. Ferromagnetism was attributed to intrinsic nature of the sample rather than any secondary magnetic phases exist in the films. The observed ferromagnetism in (In1-xNix)2O3 was attributed to ferromagnetic exchange interaction between Ni2+ ions via single free electron trapped in oxygen vacancy. Increase in oxygen vacancies with Ni concentration lead to increase in such an oxygen vacancy mediated ferromagnetic pairs resulting in increase in ferromagnetic strength with Ni concentration. © 2015 Elsevier B.V. All rights reserved.

Physica B: Condensed Matter

Room temperature ferromagnetism in (In1-xNix)2O3 thin films

Iron doped indium oxide dilute magnetic semiconductor (In1-xFex)2O3 (x = 0.00, 0.03, 0.05, and 0.07) powders were synthesized by standard solid state reaction method followed by vacuum annealing. The effect of Fe concentration on structural, optical, and magnetic properties of the (In1-xFex)2O3 powders have been systematically studied. X-ray diffraction patterns confirmed the polycrystalline cubic structure of all the samples. An optical band gap increases from 3.12 eV to 3.16 eV while Fe concentration varying from 0.03 to 0.07. Magnetic studies reveal that virgin/undoped In2O3 is diamagnetic. However, all the Fe-doped In2O3 samples are ferromagnetic. The saturation magnetization (Ms) of ferromagnetic (In1-xFex)2O3 (x = 0.03, 0.05, and 0.07) samples increases from 11.56 memu/g to 148.64 memu/g with x = 0.03-0.07. The observed ferromagnetism in these samples was attributed to magnetic nature of the dopant (Fe) as well as defects created in the samples during vacuum annealing. © 2014 Elsevier Ltd. All rights reserved.

Materials Research Bulletin

Structural, optical, and magnetic properties of Fe doped In2O3 powders

Iron-doped SnO 2 diluted magnetic semiconducting powders (Sn 1-x Fe x O 2 , x=0.00, 0.03, 0.05, 0.07, 0.10, and 0.15) were synthesized by a simple solid state reaction followed by vacuum annealing and studied the effect of Fe dopant concentrations on structural, optical, and magnetic properties of the synthesized samples. From the X-ray diffraction, it was confirmed that the samples prepared at lower dopant concentrations were tetragonal in structure whereas the samples prepared at higher dopant concentration exhibited orthorhombic SnO and Fe 2 O 3 phases along with tetragonal SnO 2 structure. FT-IR spectrum has been used to confirm the formation of Sn-O bond. The optical band gap of the Sn 1-x Fe x O 2 powders was increased from 3.6 eV to 3.7 eV with increase of dopant concentration. Raman spectroscopy measurement revealed that the broadening of the most intense Raman peak observed at 630 cm -1 with Fe doping, conforming that the Fe ions are substituted at the Sn sites in the SnO 2 lattice. Vibrating sample magnetometer measurements confirmed that the Sn 1-x Fe x O 2 powders were ferromagnetic at room temperature. © 2013 Springer Science+Business Media New York.

Journal of Superconductivity and Novel Magnetism

Physical Properties of Sn1−x Fe x O2 Powders Using Solid State Reaction

Nickel-doped indium oxide diluted magnetic semiconducting powders ((In 1-xNix)2O3, x=0.00, 0.03, 0.05, 0.07 and 0.09) were synthesized by a simple solid state reaction followed by vacuum annealing. Structural, optical and magnetic properties of (In 1-xNix)2O3 powders were studied as a function of doped Ni concentration. X-ray diffraction confirmed polycrystalline cubic structures. Decrease in optical band gap from 3.07 eV to 2.99 eV was observed when dopant concentration of Ni was increased from x=0.03 to x=0.07. Vibrating sample magnetometer measurements confirmed that all (In 1-xNix)2O3 powders were ferromagnetic at room temperature. © 2013 Elsevier Ltd. All rights reserved.

Materials Science in Semiconductor Processing

Structural, optical and magnetic properties of (In1−xNix)2O3 (0≤x≤0.09) powders synthesized by solid state reaction

Thin Solid Films

Synthesis and characterization of ferromagnetic cobalt-doped tin dioxide thin films

Journal	AIP Conference Proceedings
Publisher	Author(s)
ISSN	0094243X
Open Access	0