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Effect of gate engineering in FinFET for RF applications
, Kumar Chitroju T.R.K, Sai Anurag Reddy K, Sai Subrahmanyam M, Viswanath Sri Harsha M,
Published in IEEE

This paper presents the Radio Frequency Performance of gate engineered FinFET. Gate engineering is process of implementing different materials with different work functions on gate of device, and studying its impact on device operation. We have analyzed the capability of Single Material Gate (SMG), Dual Material Gate (DMG) and Triple Material Gate (TMG) gate FinFET for RF performance characteristics. We have used 3-D device simulation to extract the RF figure of merits such as transconductance generation factor (g m /I d ), cut-off frequency (f t ) and maximum oscillation frequency (f max ). The effect of different gate length ratios has also been reported. The result shows that TMG-FinFET exhibit superior RF performance as compared to SMG and DMG- FinFET.

About the journal
JournalData powered by Typeset2014 International Conference on Advances in Electrical Engineering (ICAEE)
PublisherData powered by TypesetIEEE
Open AccessNo