The optically transparent conducting molybdenum-doped indium oxide thin films (In2O3:Mo) were prepared on glass substrates by an activated reactive evaporation method and the influence of molybdenum doping levels on the electrical and optical properties of the films had been investigated systematically. The films, synthesized at a substrate temperature of 573 K and a Mo-doping level of 3 at.%, exhibited a minimum electrical resistivity of 5.2 × 10-4 Ω cm and an average optical transmittance of 90% in the visible region with a band gap of 3.68 eV. © 2010 Elsevier B.V. All rights reserved.

Shaik Kaleemulla

Department of Physics

School of Advanced Sciences

Vellore Campus

Madhusudhana Rao N

Girish Joshi M

Sivasankar Reddy A

Uthanna S

Sreedhara Reddy P.

Vellore Institute of Technology (VIT) is a private university located in&nbsp;Tamil Nadu, India. Founded in 1984, as Vellore Engineering College, the institution offers 20 undergraduate, 34 postgraduate, four integrated and four research programs. It has campuses in Vellore, Amravati, Bhopal and Chennai.

VIT is one of the top ranked private universities in India according to NIRF, THE and QS Rankings.&nbsp;Govt. of India has recognized&nbsp;VIT, Vellore as an&nbsp;Institution of Eminence. This has allowed VIT to take independent quality initiatives and move up in world ranking.

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VIT University

Journal of Alloys and Compounds

The iron (Fe) and tin (Sn) co-doped indium oxide (In2O3) nanoparticles at different Fe doping concentrations were prepared by solid state reaction and studied for their structural, optical and magnetic properties. The XRD patterns confirmed the cubic structure of all the undoped and co-doped samples. The average crystallite size decreased on increasing from 41 to 32 nm by increase of Fe doping concentration from 5 to 15 at.%. The optical band gap of the samples was found to decrease from 2.89 to 2.77 eV by increasing the Fe dopant concentration. The magnetic properties of the nanoparticles were studied using vibrating sample magnetometer at room temperature and at 100 K by applying the field ±75,000 Oe perpendicular to the sample. The magnetization increased with increase of applied magnetic field and no saturation was observed in all the samples. The similar behavior was observed for the nanoparticles studied at 100 K. © 2017, Springer Science+Business Media, LLC.

Journal of Materials Science: Materials in Electronics

Synthesis and magnetic properties of (Fe, Sn) co-doped In2O3 nanoparticles

The optical and electrical properties are the two important dimensions of Indium oxide and its derivatives (indium tin oxide) and were well studied to understand the origin of wide electronic band gap and high electrical conductivity at room temperature. In2O3 and its derivatives find many applications in electronic and optoelectronic domains based on the above properties. The recent discovery of ferromagnetism in In2O3 at room temperature become a third dimension and lead to intensive research on enhancement of ferromagnetic strength by various means such as dopants and synthesis protocols and extrinsic parameters. The research lead to enormous experimental data and theoretical models proliferation over the past one decade with diverse insights into the origin of ferromagnetism in In2O3 based dilute magnetic semiconductors. The experimental data and theoretical models of ferromagnetism in In2O3 has been thoroughly surveyed in the literature and compiled all the data and presented for easy of understanding in this review. We have identified best chemical composition, geometry and synthesis protocols for strongest ferromagnetic strength and suitable theoretical model of magnetism has been presented in this review. © 2016 Elsevier B.V. All rights reserved.

Journal of Magnetism and Magnetic Materials

Indium oxide: A transparent, conducting ferromagnetic semiconductor for spintronic applications

Sn1-xFeXO2 (x = 0, 0.05) thin films were prepared on glass substrate using the flash evaporation technique. The samples were annealed at 773 K for 2 hrs in air atmosphere. A systematic study was carried out on the structural and optical properties of the as deposited and annealed thin films. From the X-ray diffraction analysis it was found that the Sn1-xFeXO2 films deposited at 623 K were amorphous in nature and the Sn1-xFeXO2 films annealed at 773 K exhibited the tetragonal structure of the SnO2. The optical band gap of the SnO2 thin films was found to be as 3.17 eV whereas the optical band gap of the Sn1-xFeXO2 films was found to be as 3.01 eV after air annealing. © 2014 AIP Publishing LLC.

AIP Conference Proceedings

Structural and optical properties of Sn1−xFexO2 thin films prepared by flash evaporation technique

Transparent conducting Cr doped indium oxide thin films (In 2O3: Cr) were deposited on glass substrates by flash evaporation method and the influence of Cr doping concentrations on the structural and optical properties of the films had been investigated. The as deposited films exhibited amorphous in nature, after which it changed to cubic crystalline when the films annealed at 250°C for 2 hrs. The annealed films, exhibited an average optical transmittance of 50% in the IR region with a band gap of 2.9 eV. © 2012 American Institute of Physics.

Structural and optical studies on In2O3: Cr thin films

Transparent and high conductive molybdenum doped indium oxide (IMO) thin films have been deposited on glass substrates by activated reactive evaporation. The effect of substrate temperature on the structure, surface morphology, electrical, optical and photoluminescence properties of these films were systematically examined and it was found that crystallinity and growth orientation of the films were significantly influenced by substrate temperature. In addition the films exhibited a low electrical resistivity of 5.2 × 10-4 Ω cm with an optical transmittance 90% in the visible region of the solar spectrum at a substrate temperature of 573 K. Intensive blue PL bands at 415 and 440 nm were observed in the photoluminescence spectrum at room temperature. © 2008 Elsevier Ltd. All rights reserved.

Journal	Data powered by TypesetJournal of Alloys and Compounds
Publisher	Data powered by TypesetElsevier BV
ISSN	0925-8388
Open Access	0