In the nano-electronics era silicon nanowire MOSFET in gate all around configuration has proved to be good candidate due to its ability to suppress the short channel effects. In this paper a novel architecture introduced which is the modified form of cylindrical channel silicon nanowires. The proposed structure consists of a conical channel with tapered end near the drain. The regular tapering helps for equal distribution of field along the cross- section of the channel. The simulation results show that this architecture can improve the drain current and gain of the MOSFET. The effect of rate of tapering to various characteristics is also analyzed through simulation. © 2012 Published by Elsevier Ltd.