The mechanism of grain growth in heavily boron doped polycrystalline silicon has been studied for various boron concentrations, annealing times and annealing temperatures by proposing a kinetic model based on thermodynamical concepts. A computer simulation technique has been used to determine the grain boundary self-diffusion of silicon atoms. Our theoretical predictions have been compared with available experimental reports. This model has been extended to evaluate the grain size distribution in boron doped polysilicon for various dopant concentrations, annealing times and temperatures. The results are discussed in detail. © 1990 The Mineral,Metal & Materials Society,Inc.