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Articles
Hot electron microwave incremental conductivity of gallium nitridePublished in Optical Society of India
2005
DOI: 10.1007/bf03354788
Volume: 34
Issue: 4
Pages: 172 - 175
The microwave incremental mobility values of GaN have been calculated at 77K in presence of dc field and found that, the mobility values decreases monotonically with field. Frequency dependence of the real part of microwave conductivity is constant up to milimeter wavelength range of frequencies and the imaginary part shows a peak in submilimeter wavelength range.
Postprint Version
Content may be subject to copyright.This is a post-peer-review, pre-copyedit version of an article published in Journal of Optics. The final authenticated v... ...This is a post-peer-review, pre-copyedit version of an article published in Journal of Optics. The final authenticated version is available online at: https://doi.org/10.1007/bf03354788. The following terms of use apply: https://www.springer.com/gp/open-access/publication-policies/aam-terms-of-use.
About the journal
| Journal | Journal of Optics (India) |
|---|---|
| Publisher | Optical Society of India |
| ISSN | 09700374 |
Authors (1)
Partha Sharathi Mallick- Temperature and stress dependent properties of barrier type anodic Al 2O3 MIM capacitor
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