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Impact of bias, doping and High-K dielectric on RF stability performance of junctionless tri-gate transistor
Vyas L, Akshay D, Sharma S.M, , ,
Published in IEEE
Pages: 1377 - 1380

This paper presents the effect of process parameter variation such as oxide material, oxide thickness, doping concentration along with bias conditions and different high-k dielectric on RF stability performance of Junctionless Tri-Gate Transistor (JLTGT). The small signal RF parameter is obtained from extracted device parameters using TCAD (Technology Computer Aided Design). The results show that optimized JLTGT shows good RF stability performance.

About the journal
JournalData powered by Typeset2015 2nd International Conference on Electronics and Communication Systems (ICECS)
PublisherData powered by TypesetIEEE
Open AccessNo