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Impact of device geometry and doping concentration variation on electrical characteristics of 22nm FinFET
Published in IEEE
2013
Pages: 528 - 531
Abstract

This paper presents the impact of device physical geometry and doping concentration variation on dc characteristics of 22nm FinFET. The device geometry such as thickness of fin (T fin ) and gate oxide thickness (t ox ) are varied and the performance such as threshold voltage (V th ), subthreshold swing (SS), on current (I on ), off current (I off ) of FinFET are analyzed using TCAD. Also the impact of doping concentration on dc characteristics were studied. The results show that for T fin of 3nm, t ox of 1.5nm and fin height (H fin ) of 7nm has higher I on and lower I off .

About the journal
JournalData powered by Typeset2013 IEEE International Conference ON Emerging Trends in Computing, Communication and Nanotechnology (ICECCN)
PublisherData powered by TypesetIEEE
Open AccessNo