This paper presents the impact of device physical geometry and doping concentration variation on dc characteristics of 22nm FinFET. The device geometry such as thickness of fin (T fin ) and gate oxide thickness (t ox ) are varied and the performance such as threshold voltage (V th ), subthreshold swing (SS), on current (I on ), off current (I off ) of FinFET are analyzed using TCAD. Also the impact of doping concentration on dc characteristics were studied. The results show that for T fin of 3nm, t ox of 1.5nm and fin height (H fin ) of 7nm has higher I on and lower I off .
|Journal||Data powered by Typeset2013 IEEE International Conference ON Emerging Trends in Computing, Communication and Nanotechnology (ICECCN)|
|Publisher||Data powered by TypesetIEEE|