This paper presents the impact of device physical geometry and doping concentration variation on dc characteristics of 22nm FinFET. The device geometry such as thickness of fin (T _fin ) and gate oxide thickness (t _ox ) are varied and the performance such as threshold voltage (V _th ), subthreshold swing (SS), on current (I _on ), off current (I _off ) of FinFET are analyzed using TCAD. Also the impact of doping concentration on dc characteristics were studied. The results show that for T _fin of 3nm, t _ox of 1.5nm and fin height (H _fin ) of 7nm has higher I _on and lower I _off .