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Kinetics of grain growth in doped polycrystalline silicon thin filmsPublished in
1988
Volume: 163
Issue: C
Pages: 383 - 386
We have investigated the kinetics of grain growth, during thermal annealing, in polycrystalline silicon heavily doped with phosporus and arsenic. We have used a thermodynamic approach to evaluate the driving force behind grain growth. An expression for grain size has been derived as a function of time and temperature of annealing and concentration of dopants, and a numerical analysis has been carried out using a computer simulation technique. The results are presented and discussed in detail. © 1988.
Topics: Grain growth (63)%63% related to the paper, Nanocrystalline silicon (60)%60% related to the paper, Polycrystalline silicon (59)%59% related to the paper, Grain size (56)%56% related to the paper and Annealing (metallurgy) (54)%54% related to the paper
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About the journal
| Journal | Thin Solid Films |
|---|---|
| ISSN | 00406090 |
Authors (1)
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