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View more info for "Localized Random Telegraphic Noise Study in HfO 2 dielectric stacks using Scanning Tunneling Microscopy — Analysis of process and stress-induced traps"
Journal | Data powered by TypesetProceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA |
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Publisher | Data powered by TypesetInstitute of Electrical and Electronics Engineers Inc. |