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Low temperature nanoscale electronic transport on the MoS2 surfacePublished in
2013
DOI: 10.1063/1.4818998
Volume: 103
Issue: 8
Two-probe electronic transport measurements on a Molybdenum Disulphide (MoS2) surface were performed at low temperature (30 K) under ultra-high vacuum conditions. Two scanning tunneling microscope tips were precisely positioned in tunneling contact to measure the surface current-voltage characteristics. The separation between the tips is controllably varied and measured using a high resolution scanning electron microscope. The MoS 2 surface shows a surface electronic gap (ES) of 1.4 eV measured at a probe separation of 50 nm. Furthermore, the two- probe resistance measured outside the electronic gap shows 2D-like behavior with the two-probe separation. © 2013 AIP Publishing LLC.
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Content may be subject to copyright.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publ... ...This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in [Low temperature nanoscale electronic transport on the MoS2 surface. Applied Physics Letters 103, 8 p083106 (2013)] and may be found at https://doi.org/10.1063/1.4818998.
About the journal
| Journal | Applied Physics Letters |
|---|---|
| ISSN | 00036951 |
Authors (1)
Ramesh M Thamankar- Localized characterization of charge transport and random telegraph noise at the nanoscale in HfO2 films combining scanning tunneling microscopy and multi-scale simulations
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