In the field of Radio frequency communication devices, the switch is found its place in most of the applications has quite improved along with other RF components. Traditional switch using of semiconductor devices like MOSFET and PIN diode has made the switch in par with device integration, still faces the challenges with lossy currents are replaced with MEMS. Though adopted with different actuation schemes the capacitive switch has its most application for its feasibility of device parameters and adaptability to meet most of the requirements of RF design. Though having advantageous over the other RF switches, switching speed and pull in voltages are the major limitation of the MEMS RF capacitive switch, which is related to each other. In this paper, we have concentrated on improving the speed of the switch, by improving the resonant frequency of the beam without altering its dimensions. The design of switch dimensions is chosen for wide-band applications 18-40 GHz, with stress concentration regions. This was improved the switch resonant frequency by 300 Hz and overall switching speed by 5-15 ns with different stress concentration regions. © 2019 IEEE.