In this letter, we have presented the modeling of field dependent Maxwell-Wagner interfacial capacitance for bilayer metal-insulator-metal (MIM) capacitors. The model was verified with measured capacitance-voltage characteristics of fabricated bilayer Al2O3/TiO2 MIM capacitors. The model reveals the origin of voltage linearity of MIM capacitors at low frequencies (&lt;10&nbsp;kHz). The proposed model for bilayer/multilayer MIM capacitors is very useful tool to design circuits for mixed signal, analog and digital circuits with low variation of capacitance for change in voltage.

Kannadassan D

Department of Communication Engineering

School of Electronics Engineering

Vellore Campus

Partha Sharathi Mallick

Department of Instrumentation

School of Electrical Engineering

Fulltext

Vellore Institute of Technology (VIT) is a private university located in&nbsp;Tamil Nadu, India. Founded in 1984, as Vellore Engineering College, the institution offers 20 undergraduate, 34 postgraduate, four integrated and four research programs. It has campuses in Vellore, Amravati, Bhopal and Chennai.

VIT is one of the top ranked private universities in India according to NIRF, THE and QS Rankings.&nbsp;Govt. of India has recognized&nbsp;VIT, Vellore as an&nbsp;Institution of Eminence. This has allowed VIT to take independent quality initiatives and move up in world ranking.

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Microwave and Optical Technology Letters

Modeling of field dependent Maxwell-Wagner interfacial capacitance for bilayer metal-insulator-metal capacitors

Voltage nonlinearity is a crucial performance parameter of MIM capacitors for RF, analog and mixed signal IC applications. In present work, the fabrication and characterization of anodic high-k MIM capacitors are reported in detail and modeling of nonlinearity coefficient of capacitance is developed using polarization of induced dipoles. The model agrees with experimental results for various high-k dielectric MIM capacitors. It explores the origin of nonlinearity in capacitance–voltage characteristics of MIM capacitors and also predicts the potential requirements to meet the ITRS requirements.

Solid-State Electronics

Modeling the voltage nonlinearity of high-k MIM capacitors

This paper presents the fabrication of high performance bilayer TiO 2/Al2O3 Metal-Insulator-Metal capacitor using anodization technique. A high capacitance density of 7 fF/m2, low quadratic voltage coefficient of capacitance of 150 ppm/V2 and a low leakage current density of 9.1 nA/cm2 at 3 V are achieved which are suitable for Analog and Mixed signal applications. The influence of anodization voltage on structural and electrical properties of dielectric stack is studied in detail. At higher anodization voltages, we have observed the transformation of amorphous to crystalline state of TiO 2/Al2O3 and improvement of electrical properties. Copyright © 2013 American Scientific Publishers All rights reserved.

Journal of Nanoscience and Nanotechnology

Nanostructured bilayer anodic TiO2/Al2O3 metal-insulator-metal capacitor

This paper presents fabrication and electrical characterization of barrier type TiO2 metal-insulator-metal (MIM) capacitor using anodization. Polarization process, conduction mechanisms, and structural properties are studied in detail. We found that the anodization voltage played a major role in electrical and structural properties of the thin film. The barrier type anodic TiO2 is suggested as a dielectric material for high-performance MIM capacitors. © 2012 Elsevier Ltd.

Journal	Data powered by TypesetMicrowave and Optical Technology Letters
Publisher	Data powered by TypesetWiley
ISSN	0895-2477
Open Access	0