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Observation of resistive switching by physical analysis techniquesPublished in Institute of Electrical and Electronics Engineers Inc.
2016
High resolution transmission electron microscope (HRTEM) is widely used in the study of various RRAM materials system. HRTEM can provide detailed cross sectional characterization of RRAM devices with compositional and structural information at the same time. Recently, scanning probe microscopy (SPM) techniques have also been explored to study oxygen vacancy based RRAM switching with detailed surface, electron energy and tomography information. This paper will introduce the recent RRAM switching studies enabled by advanced physical analysis techniques. © 2016 IEEE.
Topics: High-resolution transmission electron microscopy (56)%56% related to the paper and Scanning probe microscopy (56)%56% related to the paper
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About the journal
| Journal | Data powered by Typeset2016 5th International Symposium on Next-Generation Electronics, ISNE 2016 |
|---|---|
| Publisher | Data powered by TypesetInstitute of Electrical and Electronics Engineers Inc. |
Authors (1)
Ramesh M Thamankar- Localized characterization of charge transport and random telegraph noise at the nanoscale in HfO2 films combining scanning tunneling microscopy and multi-scale simulations
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- Understanding the switching mechanism in RRAM using in-situ TEM
- CAFM based spectroscopy of stress-induced defects in HfO2 with experimental evidence of the clustering model and metastable vacancy defect state
