Triangular cross sectioned carbon nanotube bundles are proposed as VLSI interconnects. Due to their inherent geometry effects, triangular CNT (T-CNT) bundles are least capacitively coupled and hence offer least possible coupling capacitance between adjacent interconnects. So, this transpires to lesser crosstalk and induced delay in T-CNT bundle interconnects compared to traditionally proposed CNT bundle interconnect structures. So, in this work, we study the feasibility of using T-CNT bundles as interconnects in ICs. For that, we analyze the AC frequency response of T-CNT bundles and compare them with traditionally used square cross sectioned CNT (S-CNT) bundles. HSPICE based circuit simulations are carried out at various input voltages ranging from subthreshold to superthreshold voltages of 0.3V, 0.6V and 0.9V. Also, we do the analysis for local, semi-global and global interconnect lengths ranging from 500μm to 2000μm. Results show that T-CNT bundles have higher voltage gain for all lengths compared to S-CNT bundles. More specifically, T-CNT bundles have highest voltage gain at 0.3V for all lengths. This shows that T-CNT bundles are suitable as VLSI interconnects and are more suited at subthreshold voltages. © 2019 IEEE.