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Optical and electrical properties of in2O3: Mo films prepared by activated reactive evaporation technique
, A.S. Reddy, S. Uthanna, P.S. Reddy
Published in
2008
Volume: 1004
   
Pages: 316 - 320
Abstract
Transparent conducting molybdenum doped indium oxide (In2O 3: Mo) thin films with high performance have been deposited on glass substrates at 300°C by activated reactive evaporation technique and the effect of molybdenum content on the physical properties of the deposited films had been studied using spectrophotometer and van der Pauw methods. The films exhibited a lower electrical resistivity of 7.2×10-4 Ωcm and an average spectral transmittance of 83 % in visible region with an optical band gap of 3.68 eV. © 2008 American Institute of Physics.
About the journal
JournalAIP Conference Proceedings
ISSN0094243X