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Physical Modeling of p-Type Fluorinated Al-Doped Tin-Oxide Thin Film Transistors
K. Rajshekar, H.-H. Hsu, K.U.M. Kumar, P. Sathyanarayanan, , C.-H. Cheng, ,
Published in
Volume: 8
Pages: 948 - 958

Fabrication, physical modeling and dynamic response of p -type Al-doped SnOx active channel thin film transistors (TFTs) are presented for the potential application of ultra-high definition (UHD) displays. After deposition of Al-doped SnOx active layer using reactive co-sputtering, the channel was treated with plasma fluorination which improve the device performance of high ION/IOFF ratio of > 106, low subthreshold swing of 100 mV/dec and high field-effect mobility ( μ FE) of 4.8 cm2V-1s-1. To understand the origin of such high performance, physical modeling and numerical simulations were performed using density of state (DOS) model of defects/traps of oxide semiconductor. This model describes the modifications of donor-like tail states and acceptor-like Gaussian defect states due to Al doping on SnOx and fluorine treatment. To evaluate the device performance for UHD large scale displays, the dynamic responses of p -type TFT pixel circuit for various requirements are simulated with physical models. These results suggest that the Al-doped SnOx TFTs are potential candidates for future high-definition displays and many applications in transparent electronics. © 2013 IEEE.

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JournalIEEE Journal of the Electron Devices Society