Polycrystalline cubic In2O3 thin films were deposited on the normal glass substrates by activated reactive evaporation method and systematically investigated the influence of oxygen partial pressure on the structural, optical, electrical and photoluminescence properties of the films. X-ray diffraction studies revealed that the films formed at oxygen partial pressure of 2 × 10-3 mbar were nearly stoichiometric. The films formed at an oxygen partial pressure of 2 × 10-3 mbar exhibited the electrical resistivity of 8.2 × 10-4 Ω cm, optical transmittance of 87% and the optical band gap of 3.62 eV. Two distinct emission peaks in the photoluminescence spectrum were observed at 415 and 440 nm in the visible region of the solar spectrum. © 2009 Elsevier B.V. All rights reserved.

Shaik Kaleemulla

Department of Physics

School of Advanced Sciences

Vellore Campus

Reddy A.S

Uthanna S

Reddy P.S.

Fulltext

Vellore Institute of Technology (VIT) is a private university located in&nbsp;Tamil Nadu, India. Founded in 1984, as Vellore Engineering College, the institution offers 20 undergraduate, 34 postgraduate, four integrated and four research programs. It has campuses in Vellore, Amravati, Bhopal and Chennai.

VIT is one of the top ranked private universities in India according to NIRF, THE and QS Rankings.&nbsp;Govt. of India has recognized&nbsp;VIT, Vellore as an&nbsp;Institution of Eminence. This has allowed VIT to take independent quality initiatives and move up in world ranking.

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Journal of Alloys and Compounds

Fe-substituted NiO nanoparticles (Ni1−xFexO2) (x= 0.00, 0.03, 0.05, 0.07, and 0.09) were synthesised using ball-milling method followed by vacuum sintering and studied for their microstructural and magnetic properties. All the samples show a cubic structure with a crystallite size of 17–26 nm. Secondary phases related to Fe2O3 were identified from XRD, indicating that the observed ferromagnetism may be due to the dopants. The doping of Fe ions does not cause any significant variation in the crystal structure. The pure NiO nanoparticles were weak ferromagnetic in nature, and Fe-doped NiO nanoparticles exhibit room temperature ferromagnetism. The strength of magnetization increased from 0.57 to 0.94 emu/g with an increase of Fe concentration from 3 to 7 at.%, respectively. A high coercive field of 173 Oe was observed for the Ni1−xFexO2 nanoparticles at x= 0.09. The results and the process of development of ferromagnetism at room temperature in the Ni1−xFexO2 nanoparticles were presented and discussed in detail. © 2018, Springer Science+Business Media, LLC, part of Springer Nature.

Journal of Superconductivity and Novel Magnetism

Effect of Fe Substitution on Microstructure and Magnetic Properties of Ni1−xFexO2 Nanoparticles

The optical and electrical properties are the two important dimensions of Indium oxide and its derivatives (indium tin oxide) and were well studied to understand the origin of wide electronic band gap and high electrical conductivity at room temperature. In2O3 and its derivatives find many applications in electronic and optoelectronic domains based on the above properties. The recent discovery of ferromagnetism in In2O3 at room temperature become a third dimension and lead to intensive research on enhancement of ferromagnetic strength by various means such as dopants and synthesis protocols and extrinsic parameters. The research lead to enormous experimental data and theoretical models proliferation over the past one decade with diverse insights into the origin of ferromagnetism in In2O3 based dilute magnetic semiconductors. The experimental data and theoretical models of ferromagnetism in In2O3 has been thoroughly surveyed in the literature and compiled all the data and presented for easy of understanding in this review. We have identified best chemical composition, geometry and synthesis protocols for strongest ferromagnetic strength and suitable theoretical model of magnetism has been presented in this review. © 2016 Elsevier B.V. All rights reserved.

Journal of Magnetism and Magnetic Materials

Indium oxide: A transparent, conducting ferromagnetic semiconductor for spintronic applications

SiOx-In2-xO3-y heterostructure nano-columnar arrays are synthesized on n-type Si substrate by the glancing angle deposition technique. The transmission electron microscopy image shows the formation of heterostructures. A typical annealed SiOx-In 2-xO3-y nanocolumn consists of ∼70 nm SiOx and ∼170 nm long In2-xO3-y, which is polycrystalline in nature. Two-fold improved photon absorption is observed for the annealed SiOx-In2-xO3-y compared with the as-deposited columnar arrays. The SiOx-In2-xO3-y annealed device exhibits a low leakage current of 2.8 × 10-7 A (-5 V). A ∼352 times enhanced photosensitivity is observed for the annealed device at -1.5 V as compared with the as-deposited one. The hole-trapping process at the metal-annealed nanocolumn interface states efficiently reduces the depletion width under reverse bias and the Schottky height at the junction, which produces enhanced electron tunnelling and, therefore, enhanced device photosensitivity. © 2014 IOP Publishing Ltd.

Journal of Physics D: Applied Physics

Improved photo-detection from annealed SiOx-In 2-xO3-y axial heterostructure nanocolumns

Transparent and high conductive molybdenum doped indium oxide (IMO) thin films have been deposited on glass substrates by activated reactive evaporation. The effect of substrate temperature on the structure, surface morphology, electrical, optical and photoluminescence properties of these films were systematically examined and it was found that crystallinity and growth orientation of the films were significantly influenced by substrate temperature. In addition the films exhibited a low electrical resistivity of 5.2 × 10-4 Ω cm with an optical transmittance 90% in the visible region of the solar spectrum at a substrate temperature of 573 K. Intensive blue PL bands at 415 and 440 nm were observed in the photoluminescence spectrum at room temperature. © 2008 Elsevier Ltd. All rights reserved.

Vacuum

Effect of substrate temperature on the physical properties of In2O3:Mo films: Prepared by an activated reactive evaporation

Jurnal Community

Surface and Coatings Technology

Deposition of transparent conductive indium oxide by atmospheric-pressure plasma jet

Effect of precursor concentration on the properties of ITO thin films

Applied Physics Letters

Growth of In2O3(100) on Y-stabilized ZrO2(100) by O-plasma assisted molecular beam epitaxy

Physical properties of In2O3 thin films prepared at various oxygen partial pressures

Journal	Data powered by TypesetJournal of Alloys and Compounds
Publisher	Data powered by TypesetElsevier BV
ISSN	0925-8388
Open Access	Yes