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Physical properties of pure In2O3 thin films
, A.S. Readdy, S. Uthanna, P.S. Reddy
Published in National Institute of Optoelectronics
2008
Volume: 2
   
Issue: 12
Pages: 782 - 787
Abstract
Transparent conductive pure indium oxide (In2O3) thin films have been deposited on glass substrates by an activated reactive evaporation method and studied the effect of substrate temperature on the structural, electrical, optical and photoluminescence properties of the deposited films. The films were crystallized in cubic structure having an average optical transmittance of 80 % in visible region with low electrical resistivity of 9.7x10-4 Ωcm exhibiting an intensive photoluminescence emission peaks at 415 nm and 440 nm.
About the journal
JournalOptoelectronics and Advanced Materials, Rapid Communications
PublisherNational Institute of Optoelectronics
ISSN18426573