Nano-crystalline c-axis oriented In xGa 1-xN (x=0.93, 0.63, 0.5, 0.36 and 0.18) thin films were prepared by modified activated reactive evaporation technique. Phase segregation was clearly observed for x=0.5 composition. Scanning electron microscopy images reveal the average grain size for all the films to be varying from 40 to 85nm. From, the absorption spectra the band gaps for the InGaN films were found to be varying from 1.89 to 2.92eV. Micro-Raman scattering at two different excitation energies (1.96 and 2.54eV) were used to study the phase separation and compositional fluctuations of InGaN layers across their thickness. All the spectra exhibit the characteristic A 1(LO) and E 2 (high) modes corresponding to hexagonal wurtzite structure for both the excitations. No appreciable change in the peak positions for the two excitations confirms the absence of any significant phase separation across the thickness of InGaN films with x=0.36 and 0.18 composition. However, for x=0.93 and 0.63 films, gallium rich minority phase could be detected with 1.96eV excitation. The changes in the area and FWHM of the two characteristic Raman peaks for different excitations are attributed to the increased structural defects across the sample depth and also to the near resonance effects. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.