This paper investigates the multi equivalent single conductor (MESC) model for mixed CNT bundles (MCBs) which contains metallic single and double walled CNTs at the core and semiconducting single walled CNTs at the periphery. This structure shows the least delay due to crosstalk.

Uma Sathyakam P

Department of Instrumentation

School of Electrical Engineering

Vellore Campus

Partha Sharathi Mallick

Kavish Rajesh J

Vellore Institute of Technology (VIT) is a private university located in&nbsp;Tamil Nadu, India. Founded in 1984, as Vellore Engineering College, the institution offers 20 undergraduate, 34 postgraduate, four integrated and four research programs. It has campuses in Vellore, Amravati, Bhopal and Chennai.

VIT is one of the top ranked private universities in India according to NIRF, THE and QS Rankings.&nbsp;Govt. of India has recognized&nbsp;VIT, Vellore as an&nbsp;Institution of Eminence. This has allowed VIT to take independent quality initiatives and move up in world ranking.

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VIT University

Reduction of crosstalk in mixed CNT bundle interconnects for high frequency 3D ICs and SoCs

2014 International Conference on Advances in Electrical Engineering (ICAEE)

Current mode signaling (CMS) is found to be advantageous than voltage mode signaling (VMS) in VLSI interconnects. So, we propose the use of triangular carbon nanotube bundles as VLSI interconnects for CMS in VLSI circuits. T-CNT bundles have inherent advantages of lesser propagation delay and crosstalk delay than traditionally proposed square CNT bundle interconnects. We analyze the propagation delays of both the types of bundles in voltage and current mode signalling schemes and compare the improvement of propagation delay in both the cases. We find that T-CNT bundles perform better than square bundles in both the signalling schemes. © 2019 IEEE.

2019 Innovations in Power and Advanced Computing Technologies (i-PACT)

Analysis of triangular CNT bundle interconnects for current mode signalling

Carbon nanotube (CNT) interconnects are emerging as the ultimate choice for next generation ultra large scale integrated (ULSI) circuits. Significant progress in precise growth of aligned CNTs and integration of multiwalled CNT interconnects into a test chip make them promising candidates for future nanoelectronic chips. Tremendous research efforts were made on silicon based ultra-low-k dielectrics for Cu interconnects, but, the most recent advancements in polymer based composites as dielectric materials open up fresh challenges in the use of low-k dielectrics for CNT interconnects. This paper reviews the emerging polymer composites like Boron Nitride Nanotubes, Graphene/Polyimide composites, Metal Organic Frameworks and small diameter CNTs. Many reviews are already exists on the synthesis, fabrication, dielectric, mechanical, chemical and thermal properties of these materials. In this review, we have explained the specific properties of these materials and the necessities for integrating them into CNT interconnects to meet the requirements of future IC designers.Keywords: low-k dielectric materials, ultra low-k dielectrics, carbon nanotubes, interconnects, dielectric constant,

Journal of Nano Research

Future Dielectric Materials for CNT Interconnects - Possibilities and Challenges

Scaling of integrated circuits leads to increase in design complexity of the transistors. Interconnect delay, Power dissipation and electromagnetic interferences arises due to increase in resistance and capacitance at the nanometer level. Sub threshold operation of devices for ultra-low power requirement necessitates the design issues of interconnects. Carbon nanotube (CNT) interconnects are the better alternative to copper interconnects, mainly due to the excellent properties of carbon nanotubes. CNTs have higher strength and excellent thermal and electrical properties. Current carrying capacity of CNT is nearly 10 6 times that of copper. CNT are basically classified as single walled CNTs and Multiwall CNTs. In this paper, analysis on SWCNT, DWCNT and Mixed CNT bundles as interconnects were done. The performances of mixed CNT bundles are better in delay compared to SWCNT bundles and DWCNT bundles.

2016 International Conference on Communication and Signal Processing (ICCSP)

Mixed CNT bundles as VLSI interconnects

2019 IEEE 21st Electronics Packaging Technology Conference (EPTC)

On the Applicability of Triangular Carbon Nanotube Bundles as VLSI interconnects

Carbon nanotube based interconnect technology is becoming popular for its various merits over the current copper technology. The ability to conduct high current at high temperatures through the 1D structure is making the CNT interconnect technology an attractive one. Single wall and multi wall CNT interconnects have received greater interest initially when the mixed CNT bundles (MCBs) did not get much attention as VLSI interconnects. But, it was only in 2007 when the conductance study of mixed CNT bundles was done and since then many works have been reported. At this stage, it is essential to review the reports of MCB based interconnect technology. We present in this paper, the first review on MCB VLSI interconnects.

Nano Communication Networks

Towards realisation of mixed carbon nanotube bundles as VLSI interconnects: A review

Presented for the first time is an accurate modelling hierarchy for mixed CNT bundle interconnects. Single-walled CNTs and multi-walled CNTs have been modelled as equivalent single conductor transmission lines and then combined to form a mixed CNT bundle interconnect, which is basically a multiple equivalent single conductor model. Two multiple equivalent single conductor interconnects have been taken to form the multiconductor transmission line model. The delays from transient analysis for both models for a unit bundle have been compared with the corresponding ones for SWCNT bundles and MWCNTs that exist in the literature. It is found that mixed CNT bundle interconnects are superior to both SWCNT bundle and MWCNT interconnects in terms of delay.

Journal	Data powered by Typeset2014 International Conference on Advances in Electrical Engineering (ICAEE)
Publisher	Data powered by TypesetIEEE
Open Access	No