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RF and stability performance of Double Gate Tunnel FET
Published in IEEE
Pages: 1 - 4

This paper presents radio frequency (RF) performance and high frequency stability of Double Gate Tunnel FET (DG TFET). A non-quasi static small signal model is used to extract small signal parameters which are then verified with extracted parameters through simulation. The high frequency performance of DG TFET is evaluated by extracting RF parameters like cut-off frequency (f t ), maximum oscillation frequency (f max ) and stability factor (K). The result shows that DG TFET has cut-off frequency of 350GHz and unconditionally stable from 11GHz onwards.

About the journal
JournalData powered by Typeset2012 International Conference on Emerging Electronics
PublisherData powered by TypesetIEEE
Open AccessNo