Mo-doped In2O3 thin films have been prepared on glass substrates using an activated reactive evaporation method and systematically studied the effect of oxygen partial pressure on the structural, optical, electrical and photoluminescence properties of the films. The obtained films are highly transparent and conductive. The films exhibited the lowest electrical resistivity of 5.2 × 10-4 Ω cm, with an average optical transmittance of 90% in the visible region. An intensive photoluminescence emission peaks were observed at 415 and 440 nm. © 2009 Elsevier B.V. All rights reserved.

Shaik Kaleemulla

Department of Physics

School of Advanced Sciences

Vellore Campus

Sivasankar Reddy A

Uthanna S

Sreedhara Reddy P.

Vellore Institute of Technology (VIT) is a private university located in&nbsp;Tamil Nadu, India. Founded in 1984, as Vellore Engineering College, the institution offers 20 undergraduate, 34 postgraduate, four integrated and four research programs. It has campuses in Vellore, Amravati, Bhopal and Chennai.

VIT is one of the top ranked private universities in India according to NIRF, THE and QS Rankings.&nbsp;Govt. of India has recognized&nbsp;VIT, Vellore as an&nbsp;Institution of Eminence. This has allowed VIT to take independent quality initiatives and move up in world ranking.

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VIT University

Current Applied Physics

Fe-substituted NiO nanoparticles (Ni1−xFexO2) (x= 0.00, 0.03, 0.05, 0.07, and 0.09) were synthesised using ball-milling method followed by vacuum sintering and studied for their microstructural and magnetic properties. All the samples show a cubic structure with a crystallite size of 17–26 nm. Secondary phases related to Fe2O3 were identified from XRD, indicating that the observed ferromagnetism may be due to the dopants. The doping of Fe ions does not cause any significant variation in the crystal structure. The pure NiO nanoparticles were weak ferromagnetic in nature, and Fe-doped NiO nanoparticles exhibit room temperature ferromagnetism. The strength of magnetization increased from 0.57 to 0.94 emu/g with an increase of Fe concentration from 3 to 7 at.%, respectively. A high coercive field of 173 Oe was observed for the Ni1−xFexO2 nanoparticles at x= 0.09. The results and the process of development of ferromagnetism at room temperature in the Ni1−xFexO2 nanoparticles were presented and discussed in detail. © 2018, Springer Science+Business Media, LLC, part of Springer Nature.

Journal of Superconductivity and Novel Magnetism

Effect of Fe Substitution on Microstructure and Magnetic Properties of Ni1−xFexO2 Nanoparticles

The optical and electrical properties are the two important dimensions of Indium oxide and its derivatives (indium tin oxide) and were well studied to understand the origin of wide electronic band gap and high electrical conductivity at room temperature. In2O3 and its derivatives find many applications in electronic and optoelectronic domains based on the above properties. The recent discovery of ferromagnetism in In2O3 at room temperature become a third dimension and lead to intensive research on enhancement of ferromagnetic strength by various means such as dopants and synthesis protocols and extrinsic parameters. The research lead to enormous experimental data and theoretical models proliferation over the past one decade with diverse insights into the origin of ferromagnetism in In2O3 based dilute magnetic semiconductors. The experimental data and theoretical models of ferromagnetism in In2O3 has been thoroughly surveyed in the literature and compiled all the data and presented for easy of understanding in this review. We have identified best chemical composition, geometry and synthesis protocols for strongest ferromagnetic strength and suitable theoretical model of magnetism has been presented in this review. © 2016 Elsevier B.V. All rights reserved.

Journal of Magnetism and Magnetic Materials

Indium oxide: A transparent, conducting ferromagnetic semiconductor for spintronic applications

Thin Solid Films

Investigations on oxygen diffusion in annealing processes of non-stoichiometric amorphous indium tin oxide thin films

Transparent conductive In2O3:Mo thin films prepared by reactive direct current magnetron sputtering at room temperature

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Properties of transparent conductive In2O3:Mo thin films deposited by Channel Spark Ablation

Journal of Materials Research

Preparation of Molybdenum-doped Indium Oxide Thin Films Using Reactive Direct-current Magnetron Sputtering

Sensors and Actuators B: Chemical

In2O3 films deposited by spray pyrolysis as a material for ozone gas sensors

Room temperature photoluminescence property of Mo-doped In2O3 thin films

Journal	Data powered by TypesetCurrent Applied Physics
Publisher	Data powered by TypesetElsevier BV
ISSN	1567-1739
Open Access	0