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Semiconducting polymer coated single wall nanotube field-effect transistors discriminate holes from electronsPublished in
2007
DOI: 10.1063/1.2763961
Volume: 91
Issue: 4
Single wall carbon nanotube (SWNT) based field effect transistors (FET) coated with semiconducting polymers respond to photoexcitation revealing characteristic features which depend on the electronic structure of the polymer. The authors observe a decrease in the drain source current of the SWNTFET in the accumulation mode in an environment of acceptor type polymer network, and a significant increase in the current in the depletion mode for a donor type polymer network around the nanotube. © 2007 American Institute of Physics.
Topics: Nanotube (62)%62% related to the paper, Carbon nanotube quantum dot (59)%59% related to the paper, Carbon nanotube field-effect transistor (55)%55% related to the paper, Field-effect transistor (53)%53% related to the paper and Organic semiconductor (53)%53% related to the paper
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Content may be subject to copyright.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publ... ...This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in [Semiconducting polymer coated single wall nanotube field-effect transistors discriminate holes from electrons. Applied Physics Letters 91, 4 p043510 (2007)] and may be found at https://doi.org/10.1063/1.2763961.
About the journal
| Journal | Applied Physics Letters |
|---|---|
| ISSN | 00036951 |
| Open Access | No |
Authors (1)
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