Sn1-xFeXO2 (x = 0, 0.05) thin films were prepared on glass substrate using the flash evaporation technique. The samples were annealed at 773 K for 2 hrs in air atmosphere. A systematic study was carried out on the structural and optical properties of the as deposited and annealed thin films. From the X-ray diffraction analysis it was found that the Sn1-xFeXO2 films deposited at 623 K were amorphous in nature and the Sn1-xFeXO2 films annealed at 773 K exhibited the tetragonal structure of the SnO2. The optical band gap of the SnO2 thin films was found to be as 3.17 eV whereas the optical band gap of the Sn1-xFeXO2 films was found to be as 3.01 eV after air annealing. © 2014 AIP Publishing LLC.

Kuppan P

Department of Manufacturing Engineering

School of Mechanical Engineering

Vellore Campus

Shaik Kaleemulla

Department of Physics

School of Advanced Sciences

Rao N.M

Krishna N.S

Begam M.R.

Vellore Institute of Technology (VIT) is a private university located in&nbsp;Tamil Nadu, India. Founded in 1984, as Vellore Engineering College, the institution offers 20 undergraduate, 34 postgraduate, four integrated and four research programs. It has campuses in Vellore, Amravati, Bhopal and Chennai.

VIT is one of the top ranked private universities in India according to NIRF, THE and QS Rankings.&nbsp;Govt. of India has recognized&nbsp;VIT, Vellore as an&nbsp;Institution of Eminence. This has allowed VIT to take independent quality initiatives and move up in world ranking.

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VIT University

AIP Conference Proceedings

An effort was made to develop semiconductor oxide-based room temperature dilute magnetic semiconductor (DMS) thin films based on wide band gap and transparent host lattice with transition metal substitution. The Sn1 − xNixO2 (x=0.00,0.03,0.05,0.07,0.10,and0.15) thin film samples were prepared on glass substrates by flash evaporation technique. All the samples were shown single phase crystalline rutile structure of host SnO2 with dominant (110) orientation. The Ni substitution promotes reduction of average crystallite size in SnO2 as evidenced from the reduction of crystallite size from 40 (SnO2) to 20 nm (Sn0.85Ni0.15O2). In the energy dispersive spectra as well as X-ray photoelectron spectra of all the samples show, the chemical compositions are close to stoichiometric with noticeable oxygen deficiency. The crystalline films were formed by coalescence of oval-shaped polycrystalline particles of 100 nm size as evidenced from the electron micrographs. The energy band gap of DMS films decreases from 4 (SnO2) to 3.8 eV (x= 0.05) with increase of Ni content. The magnetic hysteresis loops of all the samples at room temperature show soft ferromagnetic nature except for SnO2 film. The SnO2 films show diamagnetic nature and it converts into ferromagnetic upon substitution of 3 % Sn4 + by Ni2 +. The robust intrinsic ferromagnetism (saturation magnetization, 21 emu/cm3). Further increase of Ni content weakens ferromagnetic strength due to Ni-O antiferromagnetic interactions among the nearest neighbour Ni ions via O2 − ions. The observed magnetic properties were best described by bound magnetic polarons model. © 2016, Springer Science+Business Media New York.

Journal of Superconductivity and Novel Magnetism

Microstructure and Magnetic Properties of Sn1 − x Ni x O2 Thin Films Prepared by Flash Evaporation Technique

The optically transparent conducting molybdenum-doped indium oxide thin films (In2O3:Mo) were prepared on glass substrates by an activated reactive evaporation method and the influence of molybdenum doping levels on the electrical and optical properties of the films had been investigated systematically. The films, synthesized at a substrate temperature of 573 K and a Mo-doping level of 3 at.%, exhibited a minimum electrical resistivity of 5.2 × 10-4 Ω cm and an average optical transmittance of 90% in the visible region with a band gap of 3.68 eV. © 2010 Elsevier B.V. All rights reserved.

Journal of Alloys and Compounds

Electrical and optical properties of In2O3:Mo thin films prepared at various Mo-doping levels

AIP Publishing: Coronavirus

Applied Surface Science

Structural, electrical and magnetic studies of Co:SnO2 and (Co,Mo):SnO2 films prepared by pulsed laser deposition

Materials Science in Semiconductor Processing

First-principles study of the magnetic properties of Zn-doped SnO2

Journal of Magnetism and Magnetic Materials

Variation of structural, optical and magnetic properties with Co-doping in Sn1−xCoxO2 nanoparticles

Structural and optical properties of Sn1−xFexO2 thin films prepared by flash evaporation technique

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ISSN	0094243X
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