Polycrystalline materials of Dy doped La1-xCaxMnO3 were prepared by Sol-Gel technique using citric acid as a chelating agent at 900°C. The compound was analyzed by powder X-ray diffraction technique and confirmed to be single phased orthorhombic perovskite structure with space group Pnma. From the dielectric and impedance studies confirmed the existence of dielectric relaxation and presence of space charge were observed from the dielectric constant and impedance plots respectively and confirms the existence of relaxation due to oxygen vacancy. Cole-cole plot confirms the presence of dielectric relaxation and grain contribution in the synthesized sample. © 2017 Author(s).

Ruban Kumar A

Department of Physics

School of Advanced Sciences

Vellore Campus

Nandan K.R

Vellore Institute of Technology (VIT) is a private university located in&nbsp;Tamil Nadu, India. Founded in 1984, as Vellore Engineering College, the institution offers 20 undergraduate, 34 postgraduate, four integrated and four research programs. It has campuses in Vellore, Amravati, Bhopal and Chennai.

VIT is one of the top ranked private universities in India according to NIRF, THE and QS Rankings.&nbsp;Govt. of India has recognized&nbsp;VIT, Vellore as an&nbsp;Institution of Eminence. This has allowed VIT to take independent quality initiatives and move up in world ranking.

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VIT University

AIP Conference Proceedings

In this present study, nanocrystalline perovskite structure CaMnO3 substituted with Ce and Fe was prepared by a sol–gel technique using citric acid as a chelating agent at 800&nbsp;°C. The compound was analyzed by powder X-ray diffraction technique and found to be single phased orthorhombic perovskite structure with space group Pnma. The morphology of the synthesized material study is carried out by using SEM and EDX confirmed the chemical compositions of the sample. Electrical measurements were performed to determine the conductive nature of the sample, and the conductivity increases with increasing Fe concentration. Electrode polarization effect was apparently seen in the Nyquist plot and the conductivity measurements. Dielectric relaxations were present in the sample was attributed to the existence of oxygen vacancy, migration in the ions and the Ea is calculated using Arrhenius equation. © 2016, Springer Science+Business Media New York.

Journal of Materials Science: Materials in Electronics

Electrical properties of Ca0.925Ce0.075Mn1−xFexO3 (x = 0.1–0.3) prepared by sol–gel technique

In this present study, we have reported the synthesis of ZnMn2O4, transitional metal oxide by sol–gel method. The structural and morphological properties are confirmed using various characterization techniques namely XRD, FT-IR and SEM with EDX. Dielectric studies of ZnMn2O4 are measured at the frequency varying from 50&nbsp;Hz to 5&nbsp;MHz for the temperature range of 303–573&nbsp;K. The temperature dependent electrical parameters like impedance and modulus exhibit a strong correlation with the grains, grain boundaries and space charge effects in the synthesized material. Diffusion of oxygen vacancies in the dipoles and defects in the material due to oxygen vacancy complexes are investigated by the activation energy obtained from Arrhenius plot. It was found that the relaxation process was dominated by the hopping mechanism between the Mn3+ and Mn4+. Nyquist plot of impedance was attributed to the existence of space charge interface, grain boundary and grain conduction mechanism of the material. © 2016, Springer Science+Business Media New York.

Investigation of structural and electrical properties of ZnMn2O4 synthesized by sol–gel method

We herein report dielectric studies on Ca0.9Nd0.1Ti0.9Al0.1O3−δ single crystals grown by the optical floating zone technique in the temperature range from room temperature to 660 K.

Journal	Data powered by TypesetAIP Conference Proceedings
Publisher	Data powered by TypesetAmerican Institute of Physics Inc.
Open Access	No