This paper reports measurements of the superconducting transition temperature ((Formula presented)) of Ta/Ge multilayers for a range of individual layer thicknesses. Thick amorphous Ta layers which are isolated by thick insulating (Ge) layers have a transition at 0.9 K, and it is noted that for thinner isolated layers (Formula presented) approaches zero as the resistance per square approaches the quantum resistance h/(2e(Formula presented). However, the transition temperature is enhanced in samples with thin Ge layers, and in films with Ta layers thinner than 1.5 nm (Formula presented) rises to near 3 K. The enhancement is consistent with a proximity effect involving layers of a Ta-Ge alloy at the layer boundary. © 1996 The American Physical Society.