Lakshmi B

Electronics

School of Electronics Engineering

Chennai Campus

S poorvasha

M pown

Fulltext

Vellore Institute of Technology (VIT) is a private university located in&nbsp;Tamil Nadu, India. Founded in 1984, as Vellore Engineering College, the institution offers 20 undergraduate, 34 postgraduate, four integrated and four research programs. It has campuses in Vellore, Amravati, Bhopal and Chennai.

VIT is one of the top ranked private universities in India according to NIRF, THE and QS Rankings.&nbsp;Govt. of India has recognized&nbsp;VIT, Vellore as an&nbsp;Institution of Eminence. This has allowed VIT to take independent quality initiatives and move up in world ranking.

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VIT University

Indian Journal of Science and Technology

Gallium nitride nanostructures have been receiving considerable attention as building blocks for nanophotonic technologies due to their unique high aspect ratios, promising the realization of photonic and biological nanodevices such as blue light emitting diodes (LEDs), short-wavelength ultraviolet nanolasers, and nanofluidic biochemical sensors. We report on the growth of hierarchical GaN nanowires (NWs) by dynamically adjusting the growth parameters using the pulsed flow metal-organic chemical vapor deposition technique. We carried out two step growth processes to grow hierarchical GaN NWs. In the first step, the GaN NWs were grown at 950°C, and in the second, we suitably decreased the growth temperature to 630°C and 710°C to grow the hierarchical structures. The surface morphology and optical characterization of the grown GaN NWs were studied by field-emission scanning electron microscopy, high-resolution transmission electron microscopy, photoluminescence, and cathodoluminescence measurements. These kinds of hierarchical GaN NWs are promising for allowing flat band quantum structures that are shown to improve the efficiency of LEDs. © 2017 Society of Photo-Optical Instrumentation Engineers (SPIE).

Journal of Photonics for Energy

Growth of hierarchical GaN nanowires for optoelectronic device applications

This paper presents a review on detection and treatment methods of sleep apnea. Sleep apnea is the most common type of breathing-related sleep disorder. It manifests in a variety of behaviours from teeth grinding to night terrors as involuntary nighttime events. The most common sleep disorders are narcolepsy, hypersomnia, sleep talking, sleep walking, and bedwetting. Sleep apnea (somnipathy) is a serious sleep disorder that pauses breathing while sleeping. Breathing pauses occur 30 times or more during sleep and it lasts for few seconds to minutes, when normal breathing starts after this pause. Untreated sleep apnea patients stop breathing, which happens up to hundreds of times during sleep that ultimately results in atrial fibrillation, cardiac arousal, stroke, brain tumor and other vascular diseases at the age of 65 that causes death. Smokers are at a greater threat for sleep apnea. Several studies have suggested that a person who smokes more than two packs a day has 40 times the risk of sleep apnea then nonsmokers. This review includes the discussion about detection of sleep apnea from heart rate and respiratory events. The published literature of sleep apnea and methods of treatment are also discussed. © 2017, Journal of Clinical and Diagnostic Research. All rights reserved.

JOURNAL OF CLINICAL AND DIAGNOSTIC RESEARCH

A Review on Detection and Treatment Methods of Sleep Apnea

Materials Science in Semiconductor Processing

Analytical modeling of a p-n-i-n tunneling field effect transistor

IEEE Transactions on Circuits and Systems I: Regular Papers

Analog Circuit Design Using Tunnel-FETs

IEEE Journal of the Electron Devices Society

Controlling Ambipolar Current in Tunneling FETs Using Overlapping Gate-on-Drain

Solid-State Electronics

Silicon–germanium nanowire tunnel-FETs with homo- and heterostructure tunnel junctions

Japanese Journal of Applied Physics

Tunneling field-effect transistor with Si/SiGe material for high current drivability

Tunnel Field Effect Transistors for Digital and Analog Applications: A Review

Journal	Indian Journal of Science and Technology
Publisher	Indian Society for Education and Environment
ISSN	0974-6846
Open Access	Yes