Vellore Institute of Technology (VIT) is a private university located in&nbsp;Tamil Nadu, India. Founded in 1984, as Vellore Engineering College, the institution offers 20 undergraduate, 34 postgraduate, four integrated and four research programs. It has campuses in Vellore, Amravati, Bhopal and Chennai.

VIT is one of the top ranked private universities in India according to NIRF, THE and QS Rankings.&nbsp;Govt. of India has recognized&nbsp;VIT, Vellore as an&nbsp;Institution of Eminence. This has allowed VIT to take independent quality initiatives and move up in world ranking.

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VIT University

The data-centric wireless sensor networks comprise numerous autonomous tiny nodes forms random topology in nature. Applications oriented WSNs immensely used for monitoring harsh environment. Its unique constrains are distinguishing it from traditional networks by energy, lifetime, fault tolerance, scalability and computational power. When they are deployed randomly sensing & generating vast amount of data, for which they are being used. Network meets Congestion, if huge volume of data passed. To eradicate it, misbehaving nodes are identified and skilled for self-healing without human intervention. Existing approaches focus on controlling link level congestions not node level. Our proposed fusion-centric scheme controls node congestion. To achieve this, selectively concentrate on intermediate level. Misbehaving nodes are identified by using their historic data based on fault level occurred. Lifetime is determined by allocation-rate and more radio signal usage. Our scheme keeps the network without consuming much resource. Node level control is needed for self-configuring WSNs.

Department of Database Systems

School of Computer Science and Engineering

Vellore Campus

Department of Software Systems

Computer Science

Chennai Campus

ICT and Critical Infrastructure: Proceedings of the 48th Annual Convention of Computer Society of India- Vol I Advances in Intelligent Systems and Computing

Fusion Centric Decision Making for Node Level Congestion in Wireless Sensor Networks

In this paper, we present theoretical model and computations for tuning the photoluminescence (PL) emission of InAs/GaAs quantum dots at 1.3 -1.55 μm by optimizing its height and base dimensions through quantum mechanical concepts. Simulation on the annealing induced compositional change in the QDs was carried out using Fick’s diffusion model. Results from our computation illustrated that lower base size of 10 nm and larger height QDs of 5.1 nm can be effectively utilized for extending the PL emission to longer wavelengths with minimal blue-shift on annealing. This highlights the potential of our model and computation to assist in precisely engineering the optical properties of QD materials for specific device applications.

VIT Unitversity

Advanced Materials Research

A Theoretical Investigation on the Dimensions and Annealing Effects of InAs/GaAs Quantum Dots for Device Applications at High Bit-Rate Optical Transmission Window of 1.3-1.55 μm

Fulltext

Journal of Applied Physics

Theoretical optimization of multi-layer InAs/GaAs quantum dots subject to post-growth thermal annealing for tailoring the photoluminescence emission beyond 1.3 μm