This paper proposes a body-biased bootstrapped CMOS driver for subthreshold applications. The proposed driver has been implemented with the same number of transistors as conventional bootstrapped CMOS driver. The performance of the subthreshold bootstrapped CMOS driver has been compared with the conventional bootstrapped CMOS driver. Our results show that the proposed body-biased subthreshold bootstrapped CMOS driver has 37% reduction in delay and 39% reduction in power dissipation compared to conventional bootstrapped CMOS driver. The proposed driver is more suitable to drive large loads compared to the conventional driver and operates better at subthreshold region.

Partha Sharathi Mallick

Department of Instrumentation

School of Electrical Engineering

Vellore Campus

Fulltext

Vellore Institute of Technology (VIT) is a private university located in&nbsp;Tamil Nadu, India. Founded in 1984, as Vellore Engineering College, the institution offers 20 undergraduate, 34 postgraduate, four integrated and four research programs. It has campuses in Vellore, Amravati, Bhopal and Chennai.

VIT is one of the top ranked private universities in India according to NIRF, THE and QS Rankings.&nbsp;Govt. of India has recognized&nbsp;VIT, Vellore as an&nbsp;Institution of Eminence. This has allowed VIT to take independent quality initiatives and move up in world ranking.

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VIT University

Body-Biased Subthreshold Bootstrapped CMOS Driver

Journal of Circuits, Systems and Computers

In this paper, we propose transmission gates (TGs) as buffers/repeaters for carbon nanotube (CNT)-based VLSI interconnects. Various performance metrics of the TG buffer, viz. propagation delay, crosstalk-induced delay, power dissipation, and power-delay product under super-threshold and sub-threshold conditions are analysed. Performance analysis of TG buffers with CMOS inverter buffers at various interconnect lengths and buffer insertion intervals is done. We have also analysed the performance of Single-wall carbon nanotube (SWCNT) bundle and three different configurations of mixed CNT bundles. By comparing the power-delay product of both the buffers, it is found that TG buffers are more suitable for applications in CNT-based integrated circuits.

IETE Journal of Research

Transmission Gate as Buffer for Carbon-Nanotube-Based VLSI Interconnects

Interconnects plays an important role in integrated circuits. Copper is used as an interconnect material, but beyond 22[Formula: see text]nm technology node it faces many problems due to grain boundary scattering, and therefore carbon nanotubes are the most promising future interconnect materials. Various techniques and approaches such as driver sizing, repeater sizing, repeater insertion, wire sizing, wire spacing, shielding, boos table repeater were used by various researchers. Many of these techniques can be utilized for future CNT based VLSI interconnects as well. This paper presents a detailed discussion on the techniques and approaches of past, present and future relevant for interconnects of VLSI circuits.

Optimization Techniques for CNT Based VLSI Interconnects — A Review

Carbon nanotube based interconnect technology is becoming popular for its various merits over the current copper technology. The ability to conduct high current at high temperatures through the 1D structure is making the CNT interconnect technology an attractive one. Single wall and multi wall CNT interconnects have received greater interest initially when the mixed CNT bundles (MCBs) did not get much attention as VLSI interconnects. But, it was only in 2007 when the conductance study of mixed CNT bundles was done and since then many works have been reported. At this stage, it is essential to review the reports of MCB based interconnect technology. We present in this paper, the first review on MCB VLSI interconnects.

Journal	Data powered by TypesetJournal of Circuits, Systems and Computers
Publisher	Data powered by TypesetWorld Scientific Pub Co Pte Lt
ISSN	0218-1266
Impact Factor	0.337
Open Access	No
Sherpa RoMEO Archiving Policy	Yellow