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Carrier transport in InxGa1-xN thin films grown by modified activated reactive evaporationPublished in
2011
DOI: 10.1063/1.3630000
Volume: 99
Issue: 8
In the present work, we report the temperature dependent carrier transport properties of InxGa1-xN thin films in the entire composition range grown by modified activated reactive evaporation. The carrier transport in these degenerate semiconductors is controlled by impurity band conduction. A transition from metallic to semiconducting type resistivity was observed for indium rich films. The semiconducting behavior originates from electron-electron interaction and weak localization, whereas higher temperature scattering contributes to the metallic type resistivity. A transition of resistivity behavior from the quantum phenomena to the classical Arrhenius approach was observed for x 0.12 film. © 2011 American Institute of Physics.
Topics: Weak localization (57)%57% related to the paper, Electrical resistivity and conductivity (54)%54% related to the paper, Evaporation (52)%52% related to the paper, Arrhenius equation (51)%51% related to the paper and Thin film (51)%51% related to the paper
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Content may be subject to copyright.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publ... ...This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in [Carrier transport in InxGa1?xN thin films grown by modified activated reactive evaporation. Applied Physics Letters 99, 8 p082112 (2011)] and may be found at https://doi.org/10.1063/1.3630000.
About the journal
| Journal | Applied Physics Letters |
|---|---|
| ISSN | 00036951 |
Authors (1)
Samir Ranjan Meher- Room temperature growth of high crystalline quality Cu3N thin films by modified activated reactive evaporation
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