In the present work, we report the temperature dependent carrier transport properties of InxGa1-xN thin films in the entire composition range grown by modified activated reactive evaporation. The carrier transport in these degenerate semiconductors is controlled by impurity band conduction. A transition from metallic to semiconducting type resistivity was observed for indium rich films. The semiconducting behavior originates from electron-electron interaction and weak localization, whereas higher temperature scattering contributes to the metallic type resistivity. A transition of resistivity behavior from the quantum phenomena to the classical Arrhenius approach was observed for x 0.12 film. © 2011 American Institute of Physics.