This paper presents the impact of parameter fluctuation due to process variation on radio frequency (RF) stability performance of double gate tunnel FET (DG TFET). The influence of parameter fluctuation due to process variation leads to DG TFET performance degradation. The RF figures of merit (FoM) such as cut-off frequency (f_t), maximum oscillation frequency (f_max) along with stability factor for different silicon body thickness, gate oxide thickness and gate contact alignment are obtained from extracted device parameters through numerical simulation. The impact of parameter fluctuation of silicon body thickness, gate oxide thickness and gate contact alignment was found significant and the result provides design guidelines of DG TFET for RF applications.