Header menu link for other important links
X
Nanostructured bilayer anodic TiO2/Al2O3 metal-insulator-metal capacitor
R. Karthik, D. Kannadassan, , Maryam Shojaei Baghini, , P.S. Mallick, Baghini M.S,
Published in
2013
Volume: 13
   
Issue: 10
Pages: 6894 - 6899
Abstract

This paper presents the fabrication of high performance bilayer TiO 2/Al2O3 Metal-Insulator-Metal capacitor using anodization technique. A high capacitance density of 7 fF/m2, low quadratic voltage coefficient of capacitance of 150 ppm/V2 and a low leakage current density of 9.1 nA/cm2 at 3 V are achieved which are suitable for Analog and Mixed signal applications. The influence of anodization voltage on structural and electrical properties of dielectric stack is studied in detail. At higher anodization voltages, we have observed the transformation of amorphous to crystalline state of TiO 2/Al2O3 and improvement of electrical properties. Copyright © 2013 American Scientific Publishers All rights reserved.

About the journal
JournalJournal of Nanoscience and Nanotechnology
ISSN15334880
Open AccessNo
Concepts (5)
  •  related image
    Anodization
  •  related image
    Bilayer
  •  related image
    Crystalline properties.
  •  related image
    Leakage mechanisms
  •  related image
    Metal-insulator-metal capacitor