Get all the updates for this publication
This paper presents the fabrication of high performance bilayer TiO 2/Al2O3 Metal-Insulator-Metal capacitor using anodization technique. A high capacitance density of 7 fF/m2, low quadratic voltage coefficient of capacitance of 150 ppm/V2 and a low leakage current density of 9.1 nA/cm2 at 3 V are achieved which are suitable for Analog and Mixed signal applications. The influence of anodization voltage on structural and electrical properties of dielectric stack is studied in detail. At higher anodization voltages, we have observed the transformation of amorphous to crystalline state of TiO 2/Al2O3 and improvement of electrical properties. Copyright © 2013 American Scientific Publishers All rights reserved.
Journal | Journal of Nanoscience and Nanotechnology |
---|---|
ISSN | 15334880 |
Open Access | No |