Vellore Institute of Technology (VIT) is a private university located in&nbsp;Tamil Nadu, India. Founded in 1984, as Vellore Engineering College, the institution offers 20 undergraduate, 34 postgraduate, four integrated and four research programs. It has campuses in Vellore, Amravati, Bhopal and Chennai.

VIT is one of the top ranked private universities in India according to NIRF, THE and QS Rankings.&nbsp;Govt. of India has recognized&nbsp;VIT, Vellore as an&nbsp;Institution of Eminence. This has allowed VIT to take independent quality initiatives and move up in world ranking.

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VIT University

World University root node

Department of Communication Engineering

School of Electronics Engineering

Vellore Campus

AEU-International Journal of Electronics and Communications

A compact wide-bandwidth Antipodal Vivaldi Antenna array with suppressed mutual coupling for 5G mm-wave applications

IET Microwaves, Antennas \& Propagation

Design of compact patch antenna with enhanced gain and bandwidth for 5G mm-wave applications

IETE Journal of Research

Design of Compact UWB Filter Using Parallel-coupled Line and Circular Open-circuited Stubs

International Journal of RF and Microwave Computer-Aided Engineering

Design of a compact printed lowpass filtering antenna with wideband harmonic suppression for automotive communication

Design of miniaturized super wideband printed monopole antenna operating from 0.7 to 18.5 GHz

Travelling Wave-Semiconductor Optical Amplifier (TWSOA) based 1.55 µm inline detectors are analyzed for their bandwidth characteristics under simultaneous amplification mode. Four different configurations of inline detector are considered for this study and they are full length, short length, multisection and optimum differential electrode based detector configurations. From the numerical solutions of rate equation, it is found that the short length configuration provides a bandwidth of 3 GHz and responsivity of 1650 V/W at − 20 dBm input power, compared to full length and multisection configurations. Optimum differential configuration has the best responsivity characteristics of 3600 V/W at 100 mA at − 20 dBm input power and provides two fold improvement in detection voltage than the best scheme reported earlier. However the bandwidth saturates for higher powers. For applications which demands greater responsivity with considerable bandwidth, the optimum differential configuration could be used. Applications those require higher dynamic bandwidth characteristics, the short length configuration and multi electrode configuration could be useful. © 2019, Springer Science+Business Media, LLC, part of Springer Nature.

Optical and Quantum Electronics

Bandwidth characteristics of TWSOA based inline detector configurations for near infrared communications

Frequenz

Design of compact highpass filter for 5G mm-wave applications using complementary split ring resonator

The wavelength response of 1.55 μm Near Traveling Wave Semiconductor Optical Amplifier(NTWSOA) based optical inline detector is reported in this paper. Three schemes of detection viz, single full length electrode, short single electrode and differential electrode are compared. Optimization of the electrode length and position in the case of differential electrode has provided significant improvement in the detection voltage and responsivity than the other schemes. The short single length electrode detection scheme provides better linearity characterstics than the other two schemes, along with a nominal value of detection voltage and responsivity. The optimum differential detection scheme, is found to provide an improvement of 6.98dB and 7.05 dB for 1550 nm and 1560 nm respectively compared to single short length elctrode scheme. It also provides 22.44 dB and 21.6 dB improvement in detected voltage compared to full length electrode detection scheme respectively, at -10 dBm input power.

Optoelectronics and Advanced Materials, Rapid Communications

Theoretical analysis of wavelength response and electrode optimization for SOA based optical inline detector

An efficient electrode scheme is developed to enhance the inline detector performance of a 1.55 μm, InP-InGaAsP, Traveling Wave-Semiconductor Optical Amplifier (TW-SOA). A traveling wave approach is used to determine the voltage developed along the length of the TWSOA, accurately. A single electrode along the entire length of the device and a single, short length electrode kept at certain distance from the front facet are investigated, for input optical power levels ranging from -25 dBm to +5 dBm. Efficient position of the single electrode along the cavity length is determined for maximum detected voltage. Under this scheme, the inline detector with an electrode length of 100 μm positioned at 200 μm from the front facet, is found to provide a improvement of 6 dB and 8 dB in detected voltage for 40 mA and 50 mA bias respectively, at -10 dBm input, when compared with the maximum detected voltage reported in the literature. © 2012 Elsevier GmbH.

Optik

An efficient electrode arrangement for TWSOA based inline detector

An analysis of Near Travelling Wave-Semiconductor Optical Amplifier (NTW-SOA) is presented to investigate its inline detector performance. The detected voltage is evaluated for various lengths and positions of the electrode along the active region of the device, for input optical power levels ranging from-25 dBm to +5 dBm. Under optimum conditions, the differential detection scheme shows an improvement of 3.7 dB, 4 dB for 40 mA, 50 mA bias currents respectively at-10 dBm input power, when compared with the best differential inline detection scheme reported in the literature. Further an improvement of 4.3 dB and 5.5 dB are obtained, when compared with the single electrode detection model under similar operating conditions. © 2010 PACS.

Fulltext

Journal of Optical Communications

Numerical analysis of NTW-SOA for differential inline detector applications