This paper presents the fabrication and comparative study of barrier type Al2O3 &amp; TiO2 Metal-Insulator-Metal (MIM) capacitor using anodic oxidation technique. With high capacitance density (&gt; 5fF/μm2) and low leakage current density (10nA/cm2), both the capacitors show excellent performance and meet the ITRS recommendations for the year 2015. With a detailed study on frequency dependence of capacitance and conduction mechanisms, the evaluation of capacitor performance is done for the RF and Mixed signal applications. The barrier type anodic oxides are suggested as a dielectric material for high performance MIM capacitors. © 2013 IEEE.

Kannadassan D

Department of Communication Engineering

School of Electronics Engineering

Vellore Campus

Karthik R

Electronics

Chennai Campus

Partha Sharathi Mallick

Department of Instrumentation

School of Electrical Engineering

D. Kannadassan

R. Karthik

P.S. Mallick

Maryam Shojaei Baghini

Baghini M.S.

Alumina

anodization

Crystalline

high-k

MIM capacitor

Titania

Vellore Institute of Technology (VIT) is a private university located in&nbsp;Tamil Nadu, India. Founded in 1984, as Vellore Engineering College, the institution offers 20 undergraduate, 34 postgraduate, four integrated and four research programs. It has campuses in Vellore, Amravati, Bhopal and Chennai.

VIT is one of the top ranked private universities in India according to NIRF, THE and QS Rankings.&nbsp;Govt. of India has recognized&nbsp;VIT, Vellore as an&nbsp;Institution of Eminence. This has allowed VIT to take independent quality initiatives and move up in world ranking.

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VIT University

Anodic alumina and titania MIM capacitors - an experimental comparative study

2013 International Conference on Emerging Trends in VLSI, Embedded System, Nano Electronics and Telecommunication System, ICEVENT 2013

This paper presents fabrication and electrical characterization of barrier type TiO2 metal-insulator-metal (MIM) capacitor using anodization. Polarization process, conduction mechanisms, and structural properties are studied in detail. We found that the anodization voltage played a major role in electrical and structural properties of the thin film. The barrier type anodic TiO2 is suggested as a dielectric material for high-performance MIM capacitors. © 2012 Elsevier Ltd.

Fulltext

Materials Science in Semiconductor Processing

Nanostructured metal-insulator-metal capacitor with anodic titania

In this paper, we have presented a detailed study of electrical properties and fabrication of Metal-Insulator-Metal capacitor using anodization. Anodization is regarded as a potential fabrication process for the preparation of high quality metal-insulator-metal capacitors to meet the requirements of International Technology Roadmap for Semiconductors 2012 predicted for Mixed Signal/RF technologies. With high capacitance density of 6.01 fF/μm 2 and low voltage coefficient of capacitance less than 500 ppm/V, anodic oxide MIM capacitor shows that the capacitance varies by less than 6% in the frequency range of 1 KHz to 1 MHz at 3 V and low leakage current density of less than 1 nA/cm 2 at 2 V. Copyright © 2012 American Scientific Publishers All rights reserved.

Journal of Nanoelectronics and Optoelectronics

Nanostructured barrier type anodic oxide metal-insulator-metal capacitors

Applied Physics Letters

Low leakage current in metal-insulator-metal capacitors of structural Al2O3/TiO2/Al2O3 dielectrics

2009 International Semiconductor Device Research Symposium

The ITRS metrology roadmap

2008 9th International Conference on Solid-State and Integrated-Circuit Technology

Analog/RF design techniques for high performance nanoelectronic on-chip interconnects

Anodic alumina and titania MIM capacitors - An experimental comparative study

Journal	2013 International Conference on Emerging Trends in VLSI, Embedded System, Nano Electronics and Telecommunication System, ICEVENT 2013
Open Access	No