This paper presents the fabrication and comparative study of barrier type Al2O3 & TiO2 Metal-Insulator-Metal (MIM) capacitor using anodic oxidation technique. With high capacitance density (> 5fF/μm2) and low leakage current density (10nA/cm2), both the capacitors show excellent performance and meet the ITRS recommendations for the year 2015. With a detailed study on frequency dependence of capacitance and conduction mechanisms, the evaluation of capacitor performance is done for the RF and Mixed signal applications. The barrier type anodic oxides are suggested as a dielectric material for high performance MIM capacitors. © 2013 IEEE.