This paper presents fabrication and electrical characterization of barrier type TiO2 metal-insulator-metal (MIM) capacitor using anodization. Polarization process, conduction mechanisms, and structural properties are studied in detail. We found that the anodization voltage played a major role in electrical and structural properties of the thin film. The barrier type anodic TiO2 is suggested as a dielectric material for high-performance MIM capacitors. © 2012 Elsevier Ltd.

Kannadassan D

Department of Communication Engineering

School of Electronics Engineering

Vellore Campus

Karthik R

Electronics

Chennai Campus

Partha Sharathi Mallick

Department of Instrumentation

School of Electrical Engineering

D. Kannadassan

R. Karthik

Maryam Shojaei Baghini

P.S. Mallick

Shojaei Baghini M

anodization

Crystalline properties

Dielectric polarization

Frequency dependent capacitance

Leakage Mechanisms

Fulltext

Vellore Institute of Technology (VIT) is a private university located in&nbsp;Tamil Nadu, India. Founded in 1984, as Vellore Engineering College, the institution offers 20 undergraduate, 34 postgraduate, four integrated and four research programs. It has campuses in Vellore, Amravati, Bhopal and Chennai.

VIT is one of the top ranked private universities in India according to NIRF, THE and QS Rankings.&nbsp;Govt. of India has recognized&nbsp;VIT, Vellore as an&nbsp;Institution of Eminence. This has allowed VIT to take independent quality initiatives and move up in world ranking.

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VIT University

Materials Science in Semiconductor Processing

In this letter, we have presented the modeling of field dependent Maxwell-Wagner interfacial capacitance for bilayer metal-insulator-metal (MIM) capacitors. The model was verified with measured capacitance-voltage characteristics of fabricated bilayer Al2O3/TiO2 MIM capacitors. The model reveals the origin of voltage linearity of MIM capacitors at low frequencies (&lt;10&nbsp;kHz). The proposed model for bilayer/multilayer MIM capacitors is very useful tool to design circuits for mixed signal, analog and digital circuits with low variation of capacitance for change in voltage.

Microwave and Optical Technology Letters

Modeling of field dependent Maxwell-Wagner interfacial capacitance for bilayer metal-insulator-metal capacitors

This paper presents the electrical characteristics of anodically grown multi-layer dielectric stacked MIM capacitors using anodization technique. In this work, we have studied the effects of high-k materials (Al2O3 and TiO2) on the device performances of multi-layer capacitors. The fabricated capacitors show a high capacitance density, low leakage current density and low VCC as per the ITRS recommendations and are suitable for future integrated circuits. © 2015 IEEE.

IEEE-NANO 2015 - 15th International Conference on Nanotechnology

High performance multi-layer metal-insulator-metal capacitors for future integrated circuits

This paper presents the fabrication of Al2O3/TiO2/Al2O3 metal-insulator-metal (MIM) capacitor using anodization technique. High capacitance density of &gt;3.5 fF/μm2, low quadratic voltage coefficient of capacitance of &lt;115 ppm/V2 and a low leakage current density of 4.457×10-11 A/cm2 at 3 V are achieved which are suitable for analog and mixed signal applications. We found that the anodization voltage played a major role in electrical and structural properties of the thin film. This work suggests that the anodization method can offer crystalline multilayer dielectric stack required for high performance MIM capacitor. Copyright © 2015 American Scientific Publishers All rights reserved.

Journal of Nanoscience and Nanotechnology

Nanostructured anodic multilayer dielectric stacked metal-insulator-metal capacitors

Voltage nonlinearity is a crucial performance parameter of MIM capacitors for RF, analog and mixed signal IC applications. In present work, the fabrication and characterization of anodic high-k MIM capacitors are reported in detail and modeling of nonlinearity coefficient of capacitance is developed using polarization of induced dipoles. The model agrees with experimental results for various high-k dielectric MIM capacitors. It explores the origin of nonlinearity in capacitance–voltage characteristics of MIM capacitors and also predicts the potential requirements to meet the ITRS requirements.

Solid-State Electronics

Modeling the voltage nonlinearity of high-k MIM capacitors

This paper presents the fabrication of high performance bilayer TiO 2/Al2O3 Metal-Insulator-Metal capacitor using anodization technique. A high capacitance density of 7 fF/m2, low quadratic voltage coefficient of capacitance of 150 ppm/V2 and a low leakage current density of 9.1 nA/cm2 at 3 V are achieved which are suitable for Analog and Mixed signal applications. The influence of anodization voltage on structural and electrical properties of dielectric stack is studied in detail. At higher anodization voltages, we have observed the transformation of amorphous to crystalline state of TiO 2/Al2O3 and improvement of electrical properties. Copyright © 2013 American Scientific Publishers All rights reserved.

Nanostructured bilayer anodic TiO2/Al2O3 metal-insulator-metal capacitor

In this paper, we have presented a detailed study of electrical properties and fabrication of Metal-Insulator-Metal capacitor using anodization. Anodization is regarded as a potential fabrication process for the preparation of high quality metal-insulator-metal capacitors to meet the requirements of International Technology Roadmap for Semiconductors 2012 predicted for Mixed Signal/RF technologies. With high capacitance density of 6.01 fF/μm 2 and low voltage coefficient of capacitance less than 500 ppm/V, anodic oxide MIM capacitor shows that the capacitance varies by less than 6% in the frequency range of 1 KHz to 1 MHz at 3 V and low leakage current density of less than 1 nA/cm 2 at 2 V. Copyright © 2012 American Scientific Publishers All rights reserved.

Journal of Nanoelectronics and Optoelectronics

Nanostructured barrier type anodic oxide metal-insulator-metal capacitors

Applied Physics Letters

Low leakage current in metal-insulator-metal capacitors of structural Al2O3/TiO2/Al2O3 dielectrics

Microelectronic Engineering

High performance MIM capacitor using anodic alumina dielectric

IEEE Electron Device Letters

Modeling the Negative Quadratic VCC of $hbox{SiO}_{2}$ in MIM Capacitor

Journal of Applied Physics

The mechanism for the suppression of leakage current in high dielectric TiO2 thin films by adopting ultra-thin HfO2 films for memory application

Nanostructured metal-insulator-metal capacitor with anodic titania

Journal	Materials Science in Semiconductor Processing
ISSN	13698001
Open Access	No