Publications - 39Publications - 39
Publications - 39Publications (39)
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ArticlesImpact of scaling base thickness on the performance of heterojunction phototransistors2017 | Institute of Physics Publishing
BookQuaternary capped In(Ga)As/GaAs quantum dot infrared photodetectors: From materials to devices2017 | Springer Singapore
ArticlesBackground-limited long wavelength infrared InAs/InAs1−xSbx type-II superlattice-based photodetectors operating at 110 K2017 | American Institute of Physics Inc.- ArticlesMid-wavelength infrared heterojunction phototransistors based on type-II InAs/AlSb/GaSb superlattices2016 | American Institute of Physics Inc.
- ArticlesHigh performance bias-selectable three-color Short-wave/Mid-wave/Long-wave Infrared Photodetectors based on Type-II InAs/GaSb/AlSb superlattices2016 | Nature Publishing Group
ArticlesEnhancement in Peak Detectivity and Operating Temperature of Strain-Coupled InAs/GaAs Quantum Dot Infrared Photodetectors by Rapid Thermal Annealing2015 | Institute of Electrical and Electronics Engineers Inc.- ArticlesHigh-performance short-wavelength infrared photodetectors based on type-II InAs/InAs1-xSbx/AlAs1-xSbx superlattices2015 | American Institute of Physics Inc.
- ArticlesEffect of barrier thickness on structural, optical, and spectral behaviors of vertically strain coupled InAs/GaAs quantum dot infrared photodetectors2014 | American Institute of Physics Inc.
