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Sourav Adhikary
Assistant Professor
Physics
sourav.adhikary@vit.ac.in (Work)
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Publications - 39
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Publications (39)
Publications (39)
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Articles
Bias-selectable nBn dual-band long-/very long-wavelength infrared photodetectors based on InAs/InAs1-xSbx/AlAs1-xSbx type-II superlattices /639/301/1005/1009 /639/766/1130/2799 /128 /145 /144 /142/126 /120 article
A. Haddadi
,
A. Dehzangi
,
...
,
Sourav Adhikary
and
M. Razeghi
(5 authors)
2017 | Nature Publishing Group
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PDF
Publisher Copy
Articles
Evidence of quantum dot size uniformity in strain-coupled multilayered In(Ga)As/GaAs QDs grown with constant overgrowth percentage
D. Panda
,
A. Ahmad
,
...
,
Sourav Adhikary
,
...
,
S. Chakrabarti
(6 authors)
2017 | Elsevier B.V.
Articles
Impact of scaling base thickness on the performance of heterojunction phototransistors
A. Dehzangi
,
A. Haddadi
,
Sourav Adhikary
and
M. Razeghi
2017 | Institute of Physics Publishing
Book
Quaternary capped In(Ga)As/GaAs quantum dot infrared photodetectors: From materials to devices
Sourav Adhikary
and
S. Chakrabarti
2017 | Springer Singapore
Articles
Background-limited long wavelength infrared InAs/InAs1−xSbx type-II superlattice-based photodetectors operating at 110 K
A. Haddadi
,
A. Dehzangi
,
Sourav Adhikary
,
...
,
M. Razeghi
(5 authors)
2017 | American Institute of Physics Inc.
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PDF
Publisher Copy
Other
Erratum to: Enhancement of device performance by using quaternary capping over ternary capping in strain-coupled InAs/GaAs quantum dot infrared photodetectors (Applied Physics A, (2015), 118, 2, (511-517), 10.1007/s00339-014-8854-9)
B. Tongbram
,
S. Shetty
,
...
,
Sourav Adhikary
and
S. Chakrabarti
(5 authors)
2017 | Springer Verlag
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PDF
Postprint
Conferences
InAs/InAs1-xSbx type-II superlattices for high performance long wavelength infrared detection
M. Razeghi
,
A. Haddadi
,
...
,
Sourav Adhikary
and
A. Dehzangi
(6 authors)
2016 | SPIE
Articles
Mid-wavelength infrared heterojunction phototransistors based on type-II InAs/AlSb/GaSb superlattices
A. Haddadi
,
Sourav Adhikary
,
...
,
M. Razeghi
(4 authors)
2016 | American Institute of Physics Inc.
Download
PDF
Publisher Copy
Conferences
Growth technique and effect of post growth annealing on the optical properties of In(Ga)As/GaAs quantum dot heterostructures
D. Panda
,
A. Ahmad
,
Sourav Adhikary
,
...
,
S. Chakrabarti
(5 authors)
2016 | SPIE
Conferences
High-performance short-wavelength infrared photodetectors based on type-II InAs/InAs1-xSbx/AlAs1-xSbx superlattices
M. Razeghi
,
A. Haddadi
,
...
,
Sourav Adhikary
,
...
,
A. Dehzangi
(8 authors)
2016 | SPIE
Articles
High performance bias-selectable three-color Short-wave/Mid-wave/Long-wave Infrared Photodetectors based on Type-II InAs/GaSb/AlSb superlattices
A.M. Hoang
,
A. Dehzangi
,
Sourav Adhikary
and
M. Razeghi
2016 | Nature Publishing Group
Download
PDF
Publisher Copy
Articles
The optical properties of strain-coupled InAs/GaAs quantum-dot heterostructures with varying thicknesses of GaAs and InGaAs spacer layers
S. Shetty
,
Sourav Adhikary
,
...
,
S. Chakrabarti
(6 authors)
2015 | Elsevier
Conferences
Stability in peak emission wavelength in strain-coupled multilayer InAs/GaAs quantum dot heterostructures when subjected to high-temperature rapid thermal annealing
S. Shetty
,
Sourav Adhikary
,
...
,
S. Chakrabarti
(4 authors)
2015 | SPIE
Conferences
A detail investigation on quaternary and ternary capped strain coupled quantum dots based infrared photodetectors and effect of rapid thermal annealing temperature
H. Ghadi
,
Sourav Adhikary
,
...
,
S. Chakrabarti
(5 authors)
2015 | SPIE
Articles
Enhancement in Peak Detectivity and Operating Temperature of Strain-Coupled InAs/GaAs Quantum Dot Infrared Photodetectors by Rapid Thermal Annealing
H. Ghadi
,
S. Shetty
,
Sourav Adhikary
,
...
,
S. Chakrabarti
(6 authors)
2015 | Institute of Electrical and Electronics Engineers Inc.
Articles
Enhancement of device performance by using quaternary capping over ternary capping in strain-coupled InAs/GaAs quantum dot infrared photodetectors
B. Tongbram
,
S. Shetty
,
...
,
Sourav Adhikary
and
S. Chakrabarti
(5 authors)
2015 | Springer Verlag
Articles
High-performance short-wavelength infrared photodetectors based on type-II InAs/InAs1-xSbx/AlAs1-xSbx superlattices
A. Haddadi
,
X.V. Suo
,
Sourav Adhikary
,
...
,
M. Razeghi
(7 authors)
2015 | American Institute of Physics Inc.
Conferences
Cross-sectional TEM (XTEM) analysis for vertically coupled quaternary In0.21Al0.21Ga0.58As capped InAs/GaAs quantum dot infrared photodetectors
B. Tongbram
,
H. Ghadi
,
Sourav Adhikary
,
...
,
S. Chakrabarti
(5 authors)
2015 | SPIE
Articles
Tuning in spectral response due to rapid thermal annealing on dot-in-a-well infrared photodetectors
H. Ghadi
,
Sourav Adhikary
,
...
,
S. Chakrabarti
(4 authors)
2014
Articles
Effect of barrier thickness on structural, optical, and spectral behaviors of vertically strain coupled InAs/GaAs quantum dot infrared photodetectors
H. Ghadi
,
A. Agarwal
,
Sourav Adhikary
,
...
,
A. Kumar
(9 authors)
2014 | American Institute of Physics Inc.
Showing 1-20 of 39 results
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