Vellore Institute of Technology (VIT) is a private university located in&nbsp;Tamil Nadu, India. Founded in 1984, as Vellore Engineering College, the institution offers 20 undergraduate, 34 postgraduate, four integrated and four research programs. It has campuses in Vellore, Amravati, Bhopal and Chennai.

VIT is one of the top ranked private universities in India according to NIRF, THE and QS Rankings.&nbsp;Govt. of India has recognized&nbsp;VIT, Vellore as an&nbsp;Institution of Eminence. This has allowed VIT to take independent quality initiatives and move up in world ranking.

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VIT University

This paper presents fabrication and electrical characterization of barrier type TiO2 metal-insulator-metal (MIM) capacitor using anodization. Polarization process, conduction mechanisms, and structural properties are studied in detail. We found that the anodization voltage played a major role in electrical and structural properties of the thin film. The barrier type anodic TiO2 is suggested as a dielectric material for high-performance MIM capacitors. © 2012 Elsevier Ltd.

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Department of Communication Engineering

School of Electronics Engineering

Vellore Campus

Electronics

Chennai Campus

Department of Instrumentation

School of Electrical Engineering

Fulltext

Materials Science in Semiconductor Processing

Nanostructured metal-insulator-metal capacitor with anodic titania

This article presents structure and bias optimization techniques for the radio frequency (RF) stability of silicon nanowire transistor. The RF parameters are extracted using device simulation. The device stability is obtained for various bias conditions and geometry, and observed that the proposed device structure shows good stability response. © 2012 Wiley Periodicals, Inc. Microwave Opt Technol Lett 54:2114–2117, 2012; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.27016

Department of Micro and Nanoelectronics

Microwave and Optical Technology Letters

Bias and geometry optimization of silicon nanowire transistor: Radio frequency stability perspective

This paper presents a high-k barrier type anodic Al2O 3 Metal-Insulator-Metal (MIM) capacitor for mixed signal/RF applications. The anodic oxide MIM capacitor shows high capacitance density of 6.01fF/μm2 and low voltage coefficient of capacitance less than 500ppm/V. Due to reduced defect density and improved polarization, the capacitor exhibits variability of less than 6% in the frequency range of 1KHz to 1MHz at 3V. The fabricated capacitor also shows a high breakdown field of 8.7MV/cm. The measured leakage current density is 1nA/cm2 at 5V at room temperature which is the lowest reported value till date. The capacitor also exhibits improved reliability as TBD of 10 years for applied voltage of 2V at room temperature. The capacitor meets the requirements of ITRS 2012 predicted for wireless and mixed signal/RF technologies. © 2012 IEEE.

2012 International Conference on Emerging Electronics, ICEE 2012

Temperature and stress dependent properties of barrier type anodic Al 2O3 MIM capacitor

In this paper, we have presented a detailed study of electrical properties and fabrication of Metal-Insulator-Metal capacitor using anodization. Anodization is regarded as a potential fabrication process for the preparation of high quality metal-insulator-metal capacitors to meet the requirements of International Technology Roadmap for Semiconductors 2012 predicted for Mixed Signal/RF technologies. With high capacitance density of 6.01 fF/μm 2 and low voltage coefficient of capacitance less than 500 ppm/V, anodic oxide MIM capacitor shows that the capacitance varies by less than 6% in the frequency range of 1 KHz to 1 MHz at 3 V and low leakage current density of less than 1 nA/cm 2 at 2 V. Copyright © 2012 American Scientific Publishers All rights reserved.

Journal of Nanoelectronics and Optoelectronics

Nanostructured barrier type anodic oxide metal-insulator-metal capacitors

The electron mobility values have been obtained in n-ZnO at 77&nbsp;K using the Monte Carlo simulation technique. The values agree satisfactorily with available data. The mobility values thus obtained have then been expressed by simple power law relationship. It is observed that the mobility values calculated by using these simple power law relations yield values that show agreement within 5% with those obtained from the detailed Monte Carlo simulation technique. We conclude that such empirical relationships can be effectively used for quick determination of mobility values at different electric fields in a device-modelling program and in the development of CAD tools.

Journal of Optics

Calculation of electron mobility in a futuristic optoelectronic material

The electron mobility values have been obtained at 77K using the Monte Carlo simulation technique. The values agree satisfactorily with available data. The mobility values thus obtained have then been expressed by simple power law relationship. It is observed that the mobility values calculated by using these simple power law relations yield values that show agreement within 5% with those obtained from the detailed Monte Carlo simulation technique. We conclude that such empirical relationships can be effectively used for quick determination of mobility values at different electric fields in a device-modelling program and in the development of CAD tools.